IRF640NPBF vs IPP600N25N3GXKSA1 Comparison

Detailed side-by-side comparison of IRF640NPBF by Infineon and IPP600N25N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon

IPP600N25N3GXKSA1 - 250V 25A 60mOhm N-Ch OptiMOS 3 | Infineon

IPP600N25N3GXKSA1 βœ“ Active

Specification Comparison

Parameter IRF640NPBF IPP600N25N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.25 $1.62
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 200 V 250 V
Continuous Drain Current (ID) at Tc 18 A β€”
Power Dissipation (PD) at Tc 150 W β€”
On-Resistance RDS(on) max at VGS=10V 150 mOhm β€”
Total Gate Charge (Qg) 44.7 nC [DATA_NEEDED: Qg typical value]
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Technology HEXFET (5th Generation) MOSFET (Metal Oxide)
Package TO-220AB (through-hole) β€”
Operating Junction Temperature -55 C to +150 C β€”
Avalanche Energy Rated Yes β€”
dv/dt Ruggedness Yes (dynamic rated) β€”
Mounting Type Through-Hole (TO-220 tab) Through Hole
Configuration Single N-Channel MOSFET β€”
RoHS Status Compliant (PBF suffix) β€”
Lead Finish Lead-free (PBF) β€”
Pin Count 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Part Status β€” Active
Continuous Drain Current (ID) at Tc=25C β€” 25 A
Static Drain-to-Source On-Resistance (RDS(on)) max β€” 60 mOhm at VGS=10V
Power Dissipation (PD) at Tc=25C β€” 136 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Package / Case β€” TO-220-3 (PG-TO220-3-1)
Operating Temperature Range β€” -55C to +175C (junction)
Reverse Recovery Time (trr) β€” [DATA_NEEDED: trr typical value]
Lead Free Status β€” Lead Free / RoHS Compliant

Datasheets & Resources

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