IRF640NPBF - 200V N-Channel HEXFET MOSFET 18A | Infineon
MPN: IRF640NPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.4438 | $0.44 |
| 10 | $0.39 | $3.90 |
| 100 | $0.34 | $34.00 |
| 500 | $0.29 | $145.00 |
| 1,000 | $0.25 | $250.00 |
IRF640NPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically silicon oxide) to modulate current flow between the source and drain terminals. HEXFET is Infineon's (originally International Rectifier's) trade name for its vertical-cell, hex-shaped power MOSFET structure, which maximises channel density per silicon area and reduces on-resistance. Within the broader hierarchy, the IRF640NPBF sits under: MOSFET -> discrete power transistor -> discrete semiconductor -> electronic component.
Key features include extremely low on-resistance per silicon area (a fifth-generation HEXFET hallmark), fast switching speed, dynamic dv/dt rating, full avalanche ruggedness, and a 150 C maximum operating junction temperature. The through-hole TO-220AB package with its mounting tab enables direct heatsink attachment, and the simple three-terminal gate-source-drain configuration makes the part easy to drive from standard 10 V logic-level gate drivers.
The fifth-generation HEXFET cell geometry combines advanced process techniques with a stripe-cell layout to deliver low RDS(on) per unit area while preserving the ruggedness and avalanche-energy rating that earlier generations were known for. Internally, the gate structure is optimised for fast switching and high dv/dt immunity, which is important in off-line SMPS, motor drive, and inverter applications where ringing and transient stresses can destroy lesser parts. The TO-220AB package also provides a creepage distance well-suited to 200 V rails.
Typical applications include switched-mode power supplies (SMPS), DC-DC converters, motor drivers, relay and solenoid replacement, battery management, uninterruptible power supplies (UPS), and low-frequency (<100 kHz) inverters for audio, lighting, and induction heating. The 200 V rating gives comfortable headroom for rectified 120 V mains or 48 V telecom rails.
When designing with this part, ensure VGS(th) and gate-drive headroom are correct (VGS = 10 V is recommended for lowest RDS(on)), add a gate-source resistor to suppress parasitic oscillation, and verify that the heatsink keeps Tj below 150 C under worst-case SOA. The TO-220AB tab is electrically connected to the drain - isolate with a thermal pad if the heatsink is grounded.
This page synthesises distributor pricing, drop-in TO-220AB alternatives, and practical thermal/PCB design notes not found in the bare manufacturer datasheet, giving engineers a single reference for sourcing and designing with the IRF640NPBF.
Drop-in alternatives for IRF640NPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF640NPBF (same form factor and footprint) β differing in Technology, Package, Mounting Type, Drain-to-Source Voltage (VDS), Operating Junction Temperature.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF640N
β Drop-Inπ Reference alternative (not in catalog)
IRF640PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFZ44NPBF
β Drop-Inβ In Stock
$0.65 / Unit
View Datasheet βIRLZ44NPBF
β Drop-Inβ In Stock
$0.6779 / Unit
View Datasheet βSTP55NF06L
β Drop-Inπ Reference alternative (not in catalog)
FQP33N10L
β Drop-Inπ Reference alternative (not in catalog)
IRF640NPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at Tc | 18 A |
| Power Dissipation (PD) at Tc | 150 W |
| On-Resistance RDS(on) max at VGS=10V | 150 mOhm |
| Total Gate Charge (Qg) | 44.7 nC |
| Technology | HEXFET (5th Generation) |
| Package | TO-220AB (through-hole) |
| Operating Junction Temperature | -55 C to +150 C |
| Avalanche Energy Rated | Yes |
| dv/dt Ruggedness | Yes (dynamic rated) |
| Mounting Type | Through-Hole (TO-220 tab) |
| Configuration | Single N-Channel MOSFET |
| RoHS Status | Compliant (PBF suffix) |
| Lead Finish | Lead-free (PBF) |
| Pin Count | 3 (Gate, Drain, Source) |
IRF640NPBF Pin Configuration
| Pin 1 | Gate β Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain β Drain terminal; also connected to the metal mounting tab |
| Pin 3 | Source β Source terminal (return for gate drive and load) |
IRF640NPBF Safe Operating Area (DC, Tc = 25 C)
Typical Applications
IRF640NPBF is suitable for 6 applications: Switched-Mode Power Supply (SMPS) Primary Switch, Brushed DC Motor Driver (H-Bridge / Half-Bridge), Solid-State Relay (SSR) Replacement, Battery Management / Low-Voltage DC-DC Converter, Uninterruptible Power Supply (UPS) Inverter, Automotive 12 V/24 V Load Switching.
Switched-Mode Power Supply (SMPS) Primary Switch
The IRF640NPBF is a strong fit for the primary-side switch in 100-200 W offline SMPS designs, particularly 48 V telecom rectifiers and 120 VAC-input auxiliary supplies. Its 200 V VDS gives 30 V margin above rectified 120 VAC mains peaks (~170 V), while 18 A ID and 150 mOhm RDS(on) keep conduction loss under 5 W at 5 A average primary current. The 44.7 nC Qg is easily driven by UCC28C42/UC3842-class PWM controllers through a small gate-drive transformer or low-side driver, and the part's avalanche ruggedness absorbs leakage-inductance spike energy at turn-off without an external TVS clamp. Place a 10 Ohm gate resistor and 100 kOhm gate-source pull-down to prevent parasitic turn-on from drain dv/dt.
Recommended
Brushed DC Motor Driver (H-Bridge / Half-Bridge)
The IRF640NPBF handles the high-side or low-side switch position in brushed DC motor drives up to 18 A continuous - typical for 12-48 V cordless tools, automotive accessory motors, and robotics actuators. Its 150 mOhm RDS(on) at VGS = 10 V produces only 2.7 W loss at 12 V/18 A, easily sunk by a small clip-on heatsink, and the 200 V rating provides comfortable margin for 48 V bus transients. For PWM speeds below 25 kHz the switching loss is negligible, and the rugged TO-220AB tab mounts directly to a chassis or motor housing. Pair with a gate driver such as the IR2104 to source/sink the 44.7 nC gate charge quickly, and add a flyback diode across the inductive load for safe turn-off.
Recommended
Solid-State Relay (SSR) Replacement
Replacing electromechanical relays with the IRF640NPBF gives silent, arc-free, million-cycle switching for industrial control panels, HVAC contactor replacements, and battery-management pre-charge circuits. Its 18 A ID and 200 V VDS comfortably switch 12-48 VDC loads at multiples of the relay's typical 30 A inrush rating, and the HEXFET's avalanche energy rating absorbs the back-EMF of solenoids and motor windings without an external TVS. Drive the gate from 10-15 V through a 1 kOhm resistor, hold it off with a 100 kOhm gate-source resistor for fail-safe behaviour, and bolt the TO-220AB tab to a small aluminium plate that doubles as a heatsink and chassis-mount anchor.
Recommended
Battery Management / Low-Voltage DC-DC Converter
The IRF640NPBF is well-suited as the main switch in a 48 V buck or boost converter for telecom battery banks, solar charge controllers, and e-bike / e-scooter traction packs. Its 150 mOhm RDS(on) and 200 V rating allow direct switching from 48-72 V battery rails without derating, and the TO-220AB tab provides the thermal mass needed for sustained 10-15 A loads. For synchronous rectification pair two IRF640NPBF devices in a half-bridge, driven by a UCC27211 high-side/low-side gate driver. The HEXFET avalanche rating provides built-in protection if the converter's synchronous rect dead-time is mis-tuned.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In a low-frequency (<25 kHz) square-wave or modified-sine UPS inverter the IRF640NPBF handles the 12 VDC to 120 VAC inversion stage with margin to spare. Four IRF640NPBF devices in an H-bridge configuration switch up to 18 A RMS, well above the 5-10 A typical output of a 1 kVA backup UPS. The 200 V VDS handles 170 V rectified-mains peaks, and the part's ruggedness allows direct connection to the low-impedance battery bus without elaborate snubbing. Add a 5 W zener clamp or TVS across each MOSFET for inductive load protection, and bolt each device to a common aluminium L-profile heatsink.
Recommended
Automotive 12 V/24 V Load Switching
Although not AEC-Q100 qualified, the IRF640NPBF is widely used as a generic 12 V/24 V load switch in automotive aftermarket accessories - driving auxiliary lighting, horns, cooling fans, and seat heaters directly from the battery bus. The 200 V VDS provides enormous margin over the 14.4 V nominal / 36 V load-dump transient rail, and the 18 A ID handles typical accessory loads of 5-10 A with comfortable thermal headroom. Use a fuse in series with the drain for short-circuit protection, drive the gate from the battery through a 1 kOhm resistor with a 100 kOhm pull-down to GND, and mount the TO-220AB tab to the chassis for heatsinking. Note: automotive OEMs should select AEC-Q100-qualified parts instead.
Recommended
Recommended Products Summary
Engineering reference data for IRF640NPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF640N | IRF640PBF | IRFZ44NPBF | IRLZ44NPBF | STP55NF06L | FQP33N10L |
|---|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V | 200 V | 55 V | 55 V | 55 V | 100 V |
| Continuous Drain Current (ID) | 18 A | 18 A | 18 A | 49 A | 47 A | 50 A | 33 A |
| On-Resistance RDS(on) max | 150 mOhm | 150 mOhm | 150 mOhm | 17.5 mOhm | 22 mOhm | 20 mOhm | 50 mOhm |
| Gate Threshold VGS(th) | 2-4 V (standard) | 2-4 V (standard) | 2-4 V (standard) | 2-4 V (standard) | 1-2 V (logic-level) | 1-2.5 V (logic-level) | 1-2 V (logic-level) |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC | 44.7 nC | 63 nC | 48 nC | 60 nC | 45 nC |
| RoHS Compliance | Yes (PBF suffix) | No (non-PBF lead) | Yes (PBF suffix) | Yes | Yes | Yes | Yes |
Key Differentiators
- Same-package drop-in replacement retains TO-220AB footprint (vs IRF640N (non-PBF))
- 200 V rating vs 55-100 V logic-level alternatives (vs IRLZ44NPBF (55 V logic-level))
- Cross-brand drop-in alternative available (vs STP55NF06L (STMicroelectronics))
Design Notes
At ID = 10 A continuous with VGS = 10 V, the IRF640NPBF dissipates roughly 15 W (Estimated: P = I^2 * R = 10^2 * 0.15 = 15 W). The TO-220AB has a junction-to-ambient thermal resistance of around 62 C/W without heatsink, producing a 930 C temperature rise above ambient - far beyond the 150 C Tj maximum. A 5 C/W clip-on heatsink reduces junction rise to 75 C above a 25 C ambient, fitting comfortably under Tj max with 50 C margin. Always mount the tab with thermal compound and an insulating mica or silicone pad if the heatsink is grounded, because the tab is internally bonded to the drain.
The TO-220AB is a through-hole part with three leads on a 2.54 mm pitch; PCB land pattern should reserve 3 mm of clearance around the tab hole for an M3 screw and a generous copper pour (>=1 oz, >=100 mm^2 per lead) to spread heat into the inner PCB layers. Use a TO-220 silicone-insulator pad and a shoulder washer if mounting to a grounded heatsink to avoid shorting the drain to chassis. For high-current designs add a 1 nF ceramic bypass capacitor between drain and source on the PCB, as close to the package as possible, to suppress drain-voltage ringing.
Do not drive the IRF640NPBF gate from 3.3 V or 5 V logic - the standard-level VGS(th) of 2-4 V means the device is only partially on at 5 V, and RDS(on) can be 2-5x the datasheet value, causing excessive heat and possible thermal runaway. Always use a 10 V gate driver (such as the IR2104 for half-bridge, or a dedicated gate-drive transformer for offline SMPS). Also avoid exceeding VDS = 200 V at any point including avalanche ringing - if inductive kickback pushes VDS past 200 V add a TVS clamp across drain-source or a snubber network.
Compliance Information
RoHS compliance indicated by 'PBF' suffix in MPN; lead-free plating confirmed per Infineon datasheet. Not AEC-Q100 qualified - automotive OEM applications require AEC-Q100 alternatives. Halogen-free status not explicitly stated in available data.
