IRF640NPBF vs IRLR2905TRPBF Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IRLR2905TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IRLR2905TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.25 | $0.61 |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | β |
| Power Dissipation (PD) at Tc | 150 W | β |
| On-Resistance RDS(on) max at VGS=10V | 150 mOhm | β |
| Total Gate Charge (Qg) | 44.7 nC | β |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Technology | HEXFET (5th Generation) | HEXFET (IR MOSFET, fifth generation) |
| Package | TO-220AB (through-hole) | TO-252AA (DPAK), surface mount |
| Operating Junction Temperature | -55 C to +150 C | -55C to +175C |
| Avalanche Energy Rated | Yes | β |
| dv/dt Ruggedness | Yes (dynamic rated) | β |
| Mounting Type | Through-Hole (TO-220 tab) | Surface Mount |
| Configuration | Single N-Channel MOSFET | β |
| RoHS Status | Compliant (PBF suffix) | β |
| Lead Finish | Lead-free (PBF) | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Continuous Drain Current (ID) at Tc=25C | β | 42 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | β | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | β | 32 nC |
| Power Dissipation (PD) at Tc=25C | β | 110 W |
| Avalanche Rated | β | Yes |
| Lead-Free / RoHS | β | Yes / Compliant |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Gate Drive | β | Logic-level compatible |