IRF7105TRPBF vs FDS6575 Comparison

Detailed side-by-side comparison of IRF7105TRPBF by Infineon and FDS6575 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7105TRPBF FDS6575
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.28
Manufacturer Infineon Technologies β€”
Part Series IRF7105 (HEXFET Fifth Generation) β€”
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package β€”
Drain-to-Source Voltage (Vds) 25 V β€”
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A β€”
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A β€”
Rds(on) Maximum 100 mOhm β€”
Technology HEXFET (IR MOSFET, fifth generation) PowerTrench (rugged gate)
Package 8-SO (SOIC-8) SOIC-8 (SO-8)
Total Package Power Dissipation (Pd) 2 W β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: junction temperature range] [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] β€”
Packaging Form Tape & Reel (TR) β€”
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant β€”
Pin Count 8 β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -20 V
Continuous Drain Current (ID) β€” -10 A
On-Resistance (RDS(on)) β€” 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range β€” 2.5 V to 8 V
Gate Threshold Voltage β€” [DATA_NEEDED: gate threshold voltage range]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Power Dissipation β€” [DATA_NEEDED: power dissipation at TA]
Configuration β€” Single MOSFET
Gate Source Voltage (VGS) Range β€” [DATA_NEEDED: VGS max rating]
RoHS Status β€” Compliant

Datasheets & Resources

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