IRF7205PBF vs IRF7205TRPBF Comparison
Detailed side-by-side comparison of IRF7205PBF by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7205PBF | IRF7205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.47 | $0.18 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -30 V | β |
| Continuous Drain Current (ID) | -4.6 A | β |
| On-Resistance RDS(on) max at VGS=-10V | 70 mOhm | β |
| On-Resistance RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V (typical) | -1.0 V to -3.0 V |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Technology | IR MOSFET (HEXFET, planar cell) | IR HEXFET (4th generation) |
| Package | SO-8 | SO-8 (8-SO) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Power Dissipation (TA=25C) | [DATA_NEEDED: Pd at TA=25C] | β |
| Switching Frequency Optimization | Below 100 kHz | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant (Pb-free per PBF suffix) | β |
| Generation | Fourth Generation HEXFET | β |
| FET Type | β | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | -4.6 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | β | 70 mΞ© |
| On-Resistance RDS(on) max @ VGS=-4.5V | β | 130 mΞ© |
| Total Gate Charge Qg | β | 27 nC |
| Power Dissipation (TC=25Β°C) | β | 2.5 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| RoHS / Lead-Free | β | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | β | Tape & Reel (TR suffix) |