IRF7205PBF vs IRFR9024NTRLPBF Comparison

Detailed side-by-side comparison of IRF7205PBF by Infineon and IRFR9024NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF βœ“ Active

Specification Comparison

Parameter IRF7205PBF IRFR9024NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $0.32
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -55 V
Continuous Drain Current (ID) -4.6 A β€”
On-Resistance RDS(on) max at VGS=-10V 70 mOhm 175 mOhm
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] β€”
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) β€”
Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Technology IR MOSFET (HEXFET, planar cell) HEXFET (Generation 5)
Package SO-8 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (junction) -55C to +175C
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] β€”
Switching Frequency Optimization Below 100 kHz β€”
Qualification JEDEC standard β€”
RoHS Status Compliant (Pb-free per PBF suffix) β€”
Generation Fourth Generation HEXFET β€”
MOSFET Operating Mode β€” Enhancement
Continuous Drain Current (ID) at TC=25C β€” -11 A
Gate-Source Voltage (VGS) max β€” +/-20 V
Power Dissipation (PD) at TC=25C β€” 38 W
Gate Charge (Qg) typical β€” 12.7 nC
Package Type β€” TO-252AA (DPAK)
Pin Count β€” 3 (Drain, Gate, Source + Tab)
Lead-Free / RoHS β€” Yes (LPBF suffix)
Reel Orientation β€” Left (TRL suffix)

Datasheets & Resources

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