IRF7205TRPBF vs BSL207SPH6327XTSA1 Comparison

Detailed side-by-side comparison of IRF7205TRPBF by Infineon and BSL207SPH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSL207SPH6327XTSA1

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 βœ“ Active

Specification Comparison

Parameter IRF7205TRPBF BSL207SPH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.33
FET Type P-Channel MOSFET P-Channel
Technology IR HEXFET (4th generation) MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) at TA=25Β°C -4.6 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-Resistance RDS(on) max @ VGS=-10V 70 mΞ© β€”
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΞ© β€”
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V β€”
Total Gate Charge Qg 27 nC β€”
Power Dissipation (TC=25Β°C) 2.5 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package SO-8 (8-SO) TSOP-6 (PG-TSOP6-6)
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant β€”
Packaging Tape & Reel (TR suffix) β€”
Drain to Source Voltage (VDS) β€” -20 V
Continuous Drain Current (ID) at 25C β€” 6 A (Ta)
Power Dissipation (PD) β€” 2 W (Ta)
RDS(on) Max @ VGS = -4.5 V β€” [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V β€” [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) β€” 2.5 V, 4.5 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Operating Temperature β€” -55C to +150C
Series β€” OptiMOSβ„’
Automotive Qualification β€” AEC-Q101
RoHS Status β€” Compliant
Pin Count β€” 6

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