IRF7205TRPBF vs IRF7205PBF Comparison

Detailed side-by-side comparison of IRF7205TRPBF by Infineon and IRF7205PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7205TRPBF IRF7205PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.47
FET Type P-Channel MOSFET β€”
Technology IR HEXFET (4th generation) IR MOSFET (HEXFET, planar cell)
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) at TA=25Β°C -4.6 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-Resistance RDS(on) max @ VGS=-10V 70 mΞ© β€”
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΞ© β€”
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V -1 V to -3 V (typical)
Total Gate Charge Qg 27 nC β€”
Power Dissipation (TC=25Β°C) 2.5 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package SO-8 (8-SO) SO-8
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant β€”
Packaging Tape & Reel (TR suffix) β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) β€” -4.6 A
On-Resistance RDS(on) max at VGS=-10V β€” 70 mOhm
On-Resistance RDS(on) max at VGS=-4.5V β€” [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Operating Temperature Range β€” -55 C to +150 C (junction)
Power Dissipation (TA=25C) β€” [DATA_NEEDED: Pd at TA=25C]
Switching Frequency Optimization β€” Below 100 kHz
Qualification β€” JEDEC standard
RoHS Status β€” Compliant (Pb-free per PBF suffix)
Generation β€” Fourth Generation HEXFET

Datasheets & Resources

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