IRF7205TRPBF vs IRF7342TRPBF Comparison

Detailed side-by-side comparison of IRF7205TRPBF by Infineon and IRF7342TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7205TRPBF IRF7342TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.48
FET Type P-Channel MOSFET β€”
Technology IR HEXFET (4th generation) HEXFET Power MOSFET (Fifth Generation), P-Channel
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) at TA=25Β°C -4.6 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-Resistance RDS(on) max @ VGS=-10V 70 mΞ© β€”
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΞ© β€”
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V β€”
Total Gate Charge Qg 27 nC β€”
Power Dissipation (TC=25Β°C) 2.5 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package SO-8 (8-SO) 8-SOIC (SO-8), surface mount
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant β€”
Packaging Tape & Reel (TR suffix) Tape and Reel (TR)
Part Number β€” IRF7342TRPBF
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Configuration β€” Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) β€” -3.4 A at 25 C
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) β€” -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) β€” 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) β€” 2 W
Operating Temperature Range β€” -55 C to +150 C (Tj)
Lead-Free / RoHS β€” Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type β€” P-Channel (enhancement mode)
Number of Channels β€” 2 (dual array)

Datasheets & Resources

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