IRF7205TRPBF vs IRF9Z34NPBF Comparison

Detailed side-by-side comparison of IRF7205TRPBF by Infineon and IRF9Z34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7205TRPBF IRF9Z34NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.65
FET Type P-Channel MOSFET β€”
Technology IR HEXFET (4th generation) HEXFET (5th generation)
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) at TA=25Β°C -4.6 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-Resistance RDS(on) max @ VGS=-10V 70 mΞ© β€”
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΞ© β€”
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V β€”
Total Gate Charge Qg 27 nC β€”
Power Dissipation (TC=25Β°C) 2.5 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package SO-8 (8-SO) TO-220AB (through-hole, 3-pin)
Mounting Type Surface Mount Through Hole
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant β€”
Packaging Tape & Reel (TR suffix) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) at Tc=25C β€” -19 A
Pulsed Drain Current (Idm) β€” -72 A
Power Dissipation (Pd) at Tc=25C β€” 68 W
On-Resistance Rds(on) at Vgs=-10V β€” 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) β€” 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Operating Temperature Range β€” -55C to +175C (junction)
Pinout (G-D-S) β€” Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free β€” Yes (PBF suffix)
RoHS Status β€” Compliant

Datasheets & Resources

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