IRF7205TRPBF vs IRFR5505TRLPBF Comparison

Detailed side-by-side comparison of IRF7205TRPBF by Infineon and IRFR5505TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7205TRPBF IRFR5505TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.38
FET Type P-Channel MOSFET
Technology IR HEXFET (4th generation) IR MOSFET™ (HEXFET® generation 5)
Drain-to-Source Voltage (VDS) -30 V
Continuous Drain Current (ID) at TA=25°C -4.6 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V
Total Gate Charge Qg 27 nC
Power Dissipation (TC=25°C) 2.5 W
Operating Junction Temperature -55 °C to +150 °C
Package SO-8 (8-SO) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant
Packaging Tape & Reel (TR suffix)
Polarity P-Channel
MOSFET Operating Mode Enhancement
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) -18 A (Tc)
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Operating Temperature Range -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Lead-Free / RoHS Yes (PBF suffix)
MSL Level 1

Datasheets & Resources

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