IRF7306TRPBF vs FDS6575 Comparison

Detailed side-by-side comparison of IRF7306TRPBF by Infineon and FDS6575 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7306TRPBF FDS6575
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.28
Polarity P-Channel (dual) P-Channel
Number of Channels 2 (independent, in single package) β€”
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) -3.6 A at 25Β°C -10 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Total Gate Charge Qg [DATA_NEEDED: Qg total] β€”
Maximum Power Dissipation 2 W at TA = 25Β°C β€”
Technology HEXFET Power MOSFET (Generation V) PowerTrench (rugged gate)
Operating Temperature Range -55Β°C to +150Β°C (junction) [DATA_NEEDED: operating temperature range]
Package 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) SOIC-8 (SO-8)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (TR) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Compliance Yes (PBF suffix indicates Pb-free) β€”
Qualification Consumer market qualification standards (per IR/Infineon datasheet) β€”
Avalanche Rated Yes (ruggedized device per datasheet) β€”
Drain-Source Voltage (VDS) β€” -20 V
On-Resistance (RDS(on)) β€” 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range β€” 2.5 V to 8 V
Gate Threshold Voltage β€” [DATA_NEEDED: gate threshold voltage range]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Power Dissipation β€” [DATA_NEEDED: power dissipation at TA]
Configuration β€” Single MOSFET
Gate Source Voltage (VGS) Range β€” [DATA_NEEDED: VGS max rating]
RoHS Status β€” Compliant

Datasheets & Resources

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