IRF7309TRPBF vs IRF8736TRPBF Comparison

Detailed side-by-side comparison of IRF7309TRPBF by Infineon and IRF8736TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7309TRPBF IRF8736TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.35 $0.27
Configuration Dual N-Channel + P-Channel (Complementary) Single
Polarity N+P β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (N-channel, TA=25C) 4 A β€”
Continuous Drain Current (P-channel, TA=25C) 3 A β€”
On-Resistance (N-channel, max) 50 mOhm β€”
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] β€”
Power Dissipation (TA=25C) 1.4 W β€”
Technology IR HEXFET Generation V StrongIRFET / HEXFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Operating Temperature Range -55C to +150C (TJ) -55C to +150C (junction)
Package 8-SO (SOIC-8) SO-8 (8-SO, MS-012AA)
Mounting Type Surface Mount Surface Mount
MSL Level MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) β€”
RoHS Status Compliant β€”
Packaging Tape & Reel Tape & Reel (TRPBF suffix)
FET Type β€” N-Channel
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 18 A
Power Dissipation (PD) Max at TA=25C β€” 2.5 W
Drain-Source On-Resistance (RDS(on)) Max β€” 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical β€” 17 nC
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated β€” Yes (fully characterized avalanche voltage)

Datasheets & Resources

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