IRF7313TRPBF vs IRF7342PBF Comparison

Detailed side-by-side comparison of IRF7313TRPBF by Infineon and IRF7342PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7313TRPBF IRF7342PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.89
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number IRF7313TRPBF IRF7342PBF
Technology IR MOSFET Generation V (HEXFET Fifth Generation) HEXFET (Gen V) - P-Channel MOSFET Array
Transistor Configuration Dual N-Channel (Independent) β€”
Drain-Source Voltage (VDS) max 30 V β€”
Continuous Drain Current (ID) max 6.5 A per channel β€”
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V β€”
Power Dissipation (PD) max 2 W β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: Β±V rating] β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) β€”
Operating Temperature Range -55C to +150C (junction) [DATA_NEEDED: operating temperature range]
Package 8-pin SOIC (SO-8) surface mount β€”
Mounting Type Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) β€”
Avalanche Rated Yes β€”
MSL Level 1 β€”
Qualification Standard Consumer market (per IR datasheet) β€”
Shipping Media Tape & Reel (TRPBF suffix) β€”
Original Mfr β€” International Rectifier (now Infineon)
Configuration β€” Dual P-Channel (2 independent MOSFETs)
Drain-Source Voltage V(DSS) β€” -55 V
Continuous Drain Current I(D) β€” 3.4 A
On-Resistance R(DS(on)) β€” 0.105 ohm
Power Dissipation P(D) β€” 2 W
Package / Case β€” 8-SOIC (SO-8)
Gate Threshold Vgs(th) β€” [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization β€” < 100 kHz
RoHS Status β€” Compliant
Halogen Status β€” Halogen-Free
Qualification β€” JEDEC standard

Datasheets & Resources

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