IRF7342PBF - 55V Dual P-Channel HEXFET MOSFET, 3.4A, SO-8 | Infineon
MPN: IRF7342PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.31 | $131.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
IRF7342PBF Overview
A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals in power-conversion circuits. P-channel variants conduct when the gate is pulled below the source, making them well-suited to high-side switching in systems powered from a positive rail because they can be driven by a low-voltage logic signal without requiring a bootstrap or charge-pump supply. As a P-channel MOSFET in a dual SO-8 package, the IRF7342PBF belongs to the discrete-semiconductor hierarchy: MOSFET -> P-channel MOSFET -> power MOSFET -> power switching transistor -> semiconductor.
Key features include a planar cell structure for wide safe operating area (SOA), silicon optimized for switching below 100 kHz, dynamic dv/dt rating, and 2W maximum power dissipation. The customized SO-8 lead frame provides enhanced thermal characteristics and multiple-die capability, and the package supports vapor-phase, infrared, and wave soldering. Industry-standard SO-8 pinout makes the IRF7342PBF drop-in compatible with countless other dual P-channel SO-8 MOSFETs, simplifying PCB layout reuse.
Typical applications include load switching, DC-DC conversion (synchronous rectification and buck/boost stages), battery management systems, motor control H-bridges, power-OR-ing circuits, and high-side switches in industrial, computing, and telecom power rails. The wide SOA allows use in linear-region load-dump protection circuits where other MOSFETs would fail thermally.
When designing with this device, ensure that Vgs(th) thresholds and gate-drive strength match the upstream controller, and place the gate-drive resistor close to the gate pin to limit parasitic ringing at turn-off. Add adequate copper pour under the exposed pad region to keep junction temperature within ratings at full load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRF7342PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7342PBF (same form factor and footprint) — differing in Technology, Package, Manufacturer, Configuration, Part Number.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7342TRPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IRF7343TRPBF
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IRF7313TRPBF
✅ Drop-In✓ In Stock
$0.27 / Unit
View Datasheet →IRF7389TRPBF
✅ Drop-In✓ In Stock
$0.58 / Unit
View Datasheet →IRF7304PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7342PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRF7342PBF |
| Original Mfr | International Rectifier (now Infineon) |
| Technology | HEXFET (Gen V) - P-Channel MOSFET Array |
| Configuration | Dual P-Channel (2 independent MOSFETs) |
| Drain-Source Voltage V(DSS) | -55 V |
| Continuous Drain Current I(D) | 3.4 A |
| On-Resistance R(DS(on)) | 0.105 ohm |
| Power Dissipation P(D) | 2 W |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (SO-8) |
| Switching Frequency Optimization | < 100 kHz |
| RoHS Status | Compliant |
| Halogen Status | Halogen-Free |
| Qualification | JEDEC standard |
IRF7342PBF Pin Configuration
| Pin 1 | S1 — Source of MOSFET 1 |
| Pin 2 | G1 — Gate of MOSFET 1 |
| Pin 3 | D2 — Drain of MOSFET 2 |
| Pin 4 | S2 — Source of MOSFET 2 |
| Pin 5 | G2 — Gate of MOSFET 2 |
| Pin 6 | D2 — Drain of MOSFET 2 |
| Pin 7 | D1 — Drain of MOSFET 1 |
| Pin 8 | D1 — Drain of MOSFET 1 |
Safe Operating Area (per channel)
Typical Applications
IRF7342PBF is suitable for 7 applications: High-Side Load Switch, Synchronous Rectification, DC-DC Buck Converter, Battery Management / Power Path, Motor Drive H-Bridge, Industrial 24V/48V Bus Switching, Telecom and Computing Power Rails.
High-Side Load Switch
The IRF7342PBF's P-channel construction and -55V V(DSS) make it ideal for high-side load switching on 24V and 48V industrial buses. Its 0.105 ohm R(DS(on)) at Vgs=-10V keeps conduction losses low at the rated 3.4A continuous current, while the dual-die SO-8 lets one IC drive two independent loads. Place each MOSFET between the positive supply and its load, drive the gate low to turn on, and use a pull-up resistor to keep the switch off by default. This topology eliminates the bootstrap supply required by N-channel high-side switches and simplifies gate-drive design.
Recommended
Synchronous Rectification
In buck converters, the IRF7342PBF serves as a synchronous rectifier when the main switch is N-channel. The P-channel lower MOSFET is driven complementary to the high-side N-channel, replacing a Schottky diode and reducing conduction loss. At 0.105 ohm R(DS(on)), the IRF7342PBF dissipates substantially less power than a Schottky at the rated 3.4A load. Both dies fit in one SO-8, halving PCB area versus two discrete single MOSFETs. Ensure the gate-drive timing accounts for dead-time to prevent shoot-through.
Recommended
DC-DC Buck Converter
The IRF7342PBF is well-suited as the low-side synchronous rectifier in non-isolated buck converters for telecom and computing rails. With 0.105 ohm R(DS(on)) per channel and 3.4A I(D) rating, it handles sub-100 kHz point-of-load converters at currents up to 5-6A peak in multiphase configurations. The dual-die SO-8 enables compact synchronous buck designs; connect the two dies in parallel via source and drain pins to halve on-resistance. Its <100 kHz optimization aligns with classic buck converter switching frequencies where conduction loss dominates.
Recommended
Battery Management / Power Path
The IRF7342PBF is widely used as a power-OR-ing MOSFET and battery disconnect switch in lithium-ion battery management systems. Its -55V V(DSS) rating provides ample headroom for 12V/24V battery systems with transient protection. Use one die for the charge path and the second die for the discharge path, or parallel both dies to halve R(DS(on)) and reduce I^2R loss during high-current discharge events. The dual-die SO-8 footprint minimizes PCB area versus two single-MOSFET packages.
Recommended
Motor Drive H-Bridge
In low-power brushed DC motor drives, the IRF7342PBF implements an H-bridge with two dies, each die handling one half-bridge leg. Drive gates complementary with dead-time insertion to prevent shoot-through. With 3.4A continuous current and 0.105 ohm R(DS(on)), it suits motors drawing up to 2-3A continuous in robotics, hobby, and small appliance applications. The dual-die SO-8 keeps board footprint compact, and the <100 kHz optimization matches PWM frequencies commonly used for motor speed control.
Recommended
Industrial 24V/48V Bus Switching
Industrial automation backplanes running on 24V or 48V rails benefit from the IRF7342PBF's -55V V(DSS) and ruggedized HEXFET design. Use one or both dies to switch loads like solenoids, relays, sensor power rails, and interface modules. The 0.105 ohm R(DS(on)) minimizes voltage drop in long cable runs, and the planar-cell SOA withstands inductive switching transients. The JEDEC-qualified part meets industrial reliability requirements, and the RoHS-compliant SO-8 package suits automated pick-and-place lines.
Recommended
Telecom and Computing Power Rails
The IRF7342PBF serves as a load switch and OR-ing element in telecom and computing power-distribution architectures. Each die provides an independent path for redundant supply OR-ing or for hot-swap control on server backplanes. The 3.4A per-die continuous current supports typical -48V telecom rails at moderate load, while the SO-8 footprint fits the density requirements of compact PSU modules. Use it with upstream controllers that manage soft-start and fault detection to complete the hot-swap solution.
Recommended
Recommended Products Summary
Engineering reference data for IRF7342PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7342TRPBF | IRF7343TRPBF | IRF7313TRPBF | IRF7389TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | 8-SOIC (SO-8) | 8-SOIC (SO-8) | 8-SOIC (SO-8) | 8-SOIC (SO-8) | 8-SOIC (SO-8) |
| Drain-Source Voltage V(DSS) | -55 V | -55 V | -55 V | -30 V | -30 V |
| Continuous Drain Current I(D) | 3.4 A | 3.4 A | 4.6 A | 5.7 A | 5.7 A |
| On-Resistance R(DS(on)) at Vgs=-10V | 0.105 ohm | 0.105 ohm | 0.045 ohm | 0.046 ohm | 0.029 ohm |
| Power Dissipation P(D) | 2 W | 2 W | 2 W | 2 W | 2 W |
| Configuration | Dual P-Channel | Dual P-Channel | Dual P-Channel | Dual P-Channel | Dual P-Channel |
| Switching Frequency Optimization | < 100 kHz | < 100 kHz | < 100 kHz | < 100 kHz | < 100 kHz |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Higher V(DSS) rating than -30V alternatives (vs IRF7313TRPBF)
- Industry-standard SO-8 dual P-channel pinout (vs IRF7389TRPBF)
- Lower R(DS(on)) reduction available in same family (vs IRF7343TRPBF)
Design Notes
Estimated: at 3.4A continuous drain current per channel and 2W maximum package dissipation, the SO-8 junction temperature rises with ambient per the thermal resistance. At VIN=24V, VDS=-24V (full blocking), and I(D)=1A, the die dissipates 24W which vastly exceeds 2W rating - this device is meant for switching applications, not linear-regulator use. Always verify switching losses plus conduction losses fit within 2W. Add copper-pour area under the SO-8 pads to extend the thermal envelope, and consider the IRF7343TRPBF (-45 mOhm Rds(on)) if continuous currents exceed 2A.
The SO-8 lead frame is customized for enhanced thermal performance - maximize copper pours on all four source/drain pins (S1, D1 pins 1/7/8 and S2, D2 pins 4/3/6) to spread heat. Place gate-drive components within 5 mm of the gate pins (G1=2, G2=5) to minimize parasitic inductance that causes ringing at turn-off. Use a gate series resistor (10-100 ohm) to dampen oscillation. The dual-die design lets you parallel S1/S2 and D1/D2 pads, or treat each die as an independent switch - layout accordingly.
Do not exceed V(DSS)=-55V or the device will avalanche and may fail. Body diodes of P-channel MOSFETs in synchronous rectifiers can carry large reverse currents during dead-time - add dead-time in the controller to limit shoot-through. Gate voltage must be referenced to the source pin of each die independently; tying gates together without considering source pin differences will mis-drive one die. Static electricity can rupture the gate oxide - use ESD-safe handling.
Use a gate-drive resistor (typically 10-50 ohm) close to each gate pin to limit ringing caused by gate-source capacitance and the gate-driver loop inductance. At switching edges above 1 A/ns, parasitic source inductance can create voltage transients that momentarily exceed Vgs ratings - minimize source-lead loop area by routing ground returns directly under the source pins. For high-side P-channel switches, a small gate pull-up resistor (100k) keeps the MOSFET off when the controller is unpowered.
Compliance Information
RoHS and REACH compliant per Infineon datasheet; 'PbF' suffix indicates lead-free construction; halogen-free per datasheet; JEDEC qualified per datasheet
