IRF7319TRPBF vs IRF7341GTRPBF Comparison

Detailed side-by-side comparison of IRF7319TRPBF by Infineon and IRF7341GTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7319TRPBF IRF7341GTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.76
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Product Type Dual MOSFET Array (N-channel + P-channel) β€”
Technology IR MOSFET / Fifth Generation HEXFET IR HEXFET Planar MOSFET
Drain-to-Source Voltage (VDS) 30 V β€”
Continuous Drain Current N-channel (ID) 6.5 A β€”
Continuous Drain Current P-channel (ID) 4.9 A β€”
RDS(on) Max N-channel 29 mOhm (per Infineon product page) β€”
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] β€”
Total Power Dissipation (PD) 2 W β€”
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) β€”
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) β€”
Package Type 8-SOIC (SO-8) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +175 C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: typical VGS(th) value]
Lead-Free / RoHS Yes (PBF suffix = Pb-free) β€”
Packaging Tape & Reel (TR suffix) β€”
Configuration N-Channel + P-Channel (complementary half-bridge) Dual N-Channel
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) β€” 5.1 A
On-Resistance (RDS(on)) max β€” 50 mOhm at VGS=10V
Power Dissipation (PD) β€” 2.4 W
Maximum Junction Temperature β€” 175 C
Package β€” 8-SO (SOIC-8)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
RoHS Status β€” Compliant
Lead-Free β€” Yes (PBF suffix)

Datasheets & Resources

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