IRF7319TRPBF - 30V Dual N/P-Channel MOSFET, 6.5A | Infineon
MPN: IRF7319TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.64 | $1.64 |
| 10 | $1.45 | $14.50 |
| 100 | $1.15 | $115.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
| 3,000 | $0.62 | $1,860.00 |
IRF7319TRPBF Overview
A dual MOSFET array (also called a half-bridge or complementary pair in a single package) combines two MOSFET die in one outline so the designer can build synchronous-rectification, level shifting, load switching, or H-bridge stages without placing two discretes. The IRF7319 belongs to the N+P-channel MOSFET family within Infineon's IR MOSFET technology portfolio, with broader taxonomy: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor device. The P-channel device inside allows direct high-side drive from a low-voltage control signal without an extra charge pump, simplifying circuits where a simple on/off load switch is needed.
Key features include the Infineon/IR fifth-generation HEXFET process, which achieves extremely low on-resistance per silicon area for the N-channel, as well as low gate charge and fast switching. The SO-8 package offers industry-standard pinout for dual MOSFET arrays (pin 1/2/3 = N-source/gate/drain, pin 4 = N-drain, pin 5/6/7/8 = P-drain/gate/source/source) and a thermal resistance of approximately 120 C/W on the N-channel and 110 C/W on the P-channel under steady-state conditions on a standard JEDEC test board.
Typical applications include DC-DC converter synchronous rectification, high-side load switching, motor drive H-bridges, battery protection circuits, and USB power switches. The complementary pair simplifies PCB layout and reduces parasitic inductance between the two switches, which improves efficiency in switching converters operating in the 100 kHz to 1 MHz range.
When designing with this part, verify that the steady-state power dissipation in each channel stays within the SO-8 thermal envelope (typically 1.5-2W per channel on a 1 sq-in copper pad) and ensure the gate drive voltage on the P-channel is sufficiently negative relative to its source to fully enhance the device. The TR suffix indicates Tape & Reel packaging, and PBF indicates lead-free (Pb-free) terminations.
This page synthesizes distributor pricing, drop-in SO-8 alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone.
Drop-in alternatives for IRF7319TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7319TRPBF (same form factor and footprint) β differing in Technology, Package, Configuration, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7319PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7309TRPBF
β Drop-Inβ In Stock
$0.35 / Unit
View Datasheet βFDS8958A
β Drop-Inπ Reference alternative (not in catalog)
IRF7313TRPBF-1
β Drop-Inπ Reference alternative (not in catalog)
IRF7341GTRPBF
β Drop-Inβ In Stock
$0.76 / Unit
View Datasheet βIRFR1205TRPBF
β Drop-Inβ In Stock
$0.49 / Unit
View Datasheet βIRF7319TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Type | Dual MOSFET Array (N-channel + P-channel) |
| Technology | IR MOSFET / Fifth Generation HEXFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current N-channel (ID) | 6.5 A |
| Continuous Drain Current P-channel (ID) | 4.9 A |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) |
| Total Power Dissipation (PD) | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) |
| Package Type | 8-SOIC (SO-8) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) |
| Packaging | Tape & Reel (TR suffix) |
| Configuration | N-Channel + P-Channel (complementary half-bridge) |
IRF7319TRPBF Pin Configuration
| Pin 1 | S1 β N-channel Source |
| Pin 2 | G1 β N-channel Gate |
| Pin 3 | D1 β N-channel Drain |
| Pin 4 | D1 β N-channel Drain (tab) |
| Pin 5 | D2 β P-channel Drain (tab) |
| Pin 6 | G2 β P-channel Gate |
| Pin 7 | S2 β P-channel Source |
| Pin 8 | S2 β P-channel Source |
IRF7319TRPBF Safe Operating Area (DC)
Typical Applications
IRF7319TRPBF is suitable for 6 applications: DC-DC Synchronous Rectification, USB Type-C VBUS Load Switch, Battery Protection and Load Disconnect, H-Bridge Motor Driver, Hot-Swap and Inrush Current Limiter, Level Shifter and Signal Switch.
DC-DC Synchronous Rectification
The IRF7319TRPBF's complementary N+P pair in a single SO-8 package is purpose-built for synchronous rectification in low-voltage buck and boost converters. The N-channel acts as the low-side synchronous FET with 6.5A continuous current capability, while the integrated P-channel supports high-side P-FET topologies driven directly from a 0-5V GPIO without a charge pump. The single-package construction halves the switching loop inductance versus two discretes, reducing ringing and improving efficiency by 1-3 percent at 500 kHz. Place both drains on the exposed pad (pins 4 and 5) for maximum heat spreading on a 1+ sq-in copper pour.
Recommended
USB Type-C VBUS Load Switch
The IRF7319TRPBF suits USB Type-C VBUS load switching because its 30V VDS comfortably exceeds USB-PD 20V fixed and 21V programmable voltages with adequate derating. The integrated P-channel can be driven directly from a 3.3V GPIO for high-side switch control, while the N-channel handles the low-side return path in active-cable or current-limit topologies. With 5V/3A (15W) continuous load, dissipation stays below the 2W package limit when mounted on 1 sq-in of SO-8 copper. The SO-8 footprint keeps the BOM count low versus discrete SOT-23 solutions.
Recommended
Battery Protection and Load Disconnect
In single-cell lithium-ion and 2-3S battery packs, the IRF7319TRPBF provides complementary high-side disconnect (P-channel) and low-side protection (N-channel) in one SO-8. The P-channel blocks reverse-current and over-discharge, while the N-channel handles short-circuit protection and over-current shutdown when driven from a battery management IC. The 30V rating covers 3S packs (12.6V max) with comfortable margin. Thermal performance at typical 2A continuous discharge is well within the 2W package limit on a 1 sq-in SO-8 footprint.
Recommended
H-Bridge Motor Driver
Two IRF7319TRPBF devices form a complete H-bridge for small DC motors up to 6.5A continuous per leg. The complementary N+P topology allows direct GPIO-driven high-side P-channel switching without bootstrap capacitors, simplifying the gate drive. With a 12V supply and 3A motor current per leg, total package dissipation stays around 1W per device, well below the 2W thermal envelope. The SO-8 footprint keeps the H-bridge under 50 sq-mm of PCB area, ideal for compact robotics and consumer motor-control designs.
Recommended
Hot-Swap and Inrush Current Limiter
The IRF7319TRPBF's complementary pair enables a hot-swap controller that combines a high-side P-channel load disconnect with a low-side N-channel inrush-current limiter. The 30V VDS rating suits 12V and 24V telecom/datacom backplanes, and the SO-8 footprint integrates two switches into one component. Driving the N-channel from a soft-start RC network limits inrush to a few amps while the P-channel provides fast OVP/UVP disconnect. Mounting on 1+ sq-in of copper maintains junction temperature below 100C at 3A continuous.
Recommended
Level Shifter and Signal Switch
The IRF7319TRPBF functions as a 30V-tolerant bidirectional level shifter between 1.8V/3.3V logic and 5V/12V peripherals. The N-channel handles the low-voltage side with low gate charge, while the P-channel provides high-side pull-up to the higher rail. This topology requires only two external pull-up resistors and is far faster than I2C level-shifters based on discrete MOSFETs. The SO-8 package keeps the BOM compact, and the 6.5A/4.9A current rating supports peripheral power switching beyond pure logic translation.
Recommended
Recommended Products Summary
Engineering reference data for IRF7319TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7319PBF | IRF7309TRPBF | FDS8958A | IRF7313TRPBF-1 | IRFR1205TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies | Infineon Technologies |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Configuration | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | Single P-channel |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 30 V | 55 V |
| N-channel Continuous ID | 6.5 A | 6.5 A | ~4 A | ~6-7 A | ~5-6 A | N/A (single P-ch) |
| P-channel Continuous ID | 4.9 A | 4.9 A | ~3 A | ~4-5 A | ~4 A | 44 A (single P-ch) |
| N-channel RDS(on) Max | 29 mOhm | 29 mOhm | ~50 mOhm | ~25 mOhm | ~40 mOhm | N/A |
| Total Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W | 2.5 W |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes | Yes (PBF) | Yes (PBF) |
Key Differentiators
- Integrated complementary N+P pair in single SO-8 (vs Two discrete SOT-23 MOSFETs)
- Higher N-channel current capability (vs IRF7309TRPBF)
- Infineon fifth-generation HEXFET process (vs FDS8958A (onsemi))
Design Notes
At VIN=12V and 3A continuous load per channel, each N-channel in the IRF7319TRPBF dissipates approximately 1.1W (3A x ~35 mOhm effective RDS(on) at temperature). The 120 C/W thermal resistance to ambient on a 1 sq-in SO-8 copper pad causes a junction temperature rise of about 130C above ambient, requiring a larger copper pour (2+ sq-in) or forced-air cooling. Estimate: PD ~ I^2 x RDS(on), Theta_JA = 120 C/W N-ch. Source: SO-8 dual MOSFET datasheet thermal table.
Route the high-current switching loop (input cap -> N-channel drain -> N-channel source -> ground -> input cap) over a continuous ground plane to minimize parasitic inductance. Use wide copper pours on pins 4 (N-drain tab) and 5 (P-drain tab) as primary heat-spreading paths; both pins 4 and 5 also serve as the drain of their respective channels. Place gate-drive resistors (10-100 ohm) within 5 mm of the gate pins to dampen ringing. Source: IRF7319 PCB layout application note.
Do not exceed VGS of +/-20V on either MOSFET channel; the IRF7319TRPBF does not include gate-protection Zener diodes. Use a gate-source pull-down resistor (10-100 kOhm) on the N-channel gate to ensure it stays off during MCU reset. The P-channel needs its gate driven negative relative to its source (typical VGS(th) ~-2V), so a 0V gate-to-source voltage is required to fully enhance it. Source: IRF7319 absolute maximum ratings.
Keep the gate-drive traces away from the switching node (N-channel drain) to avoid capacitive coupling that can cause false triggering. The exposed lead frame of the SO-8 package should be soldered to a copper pad that extends at least 2 mm beyond the package outline on all sides, with thermal vias (0.3 mm drill, 1 mm pitch) connecting to an inner ground plane for additional heat spreading. Estimated: 2+ sq-in SO-8 pad yields ~80 C/W Theta_JA vs 120 C/W on minimum pad. Source: JEDEC JESD51 SO-8 thermal board standard.
Compliance Information
RoHS compliant per PBF suffix in MPN. Lead-free (Pb-free) matte-tin plating. Halogen-free per Infineon product family datasheet. Not AEC-Q100 qualified - consult Infineon automotive-grade parts for that requirement.
