IRF7319TRPBF vs IRF7389TRPBF Comparison

Detailed side-by-side comparison of IRF7319TRPBF by Infineon and IRF7389TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7319TRPBF IRF7389TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.58
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Product Type Dual MOSFET Array (N-channel + P-channel) β€”
Technology IR MOSFET / Fifth Generation HEXFET HEXFET Generation V (IR MOSFET)
Drain-to-Source Voltage (VDS) 30 V β€”
Continuous Drain Current N-channel (ID) 6.5 A β€”
Continuous Drain Current P-channel (ID) 4.9 A β€”
RDS(on) Max N-channel 29 mOhm (per Infineon product page) β€”
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] β€”
Total Power Dissipation (PD) 2 W β€”
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) β€”
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) β€”
Package Type 8-SOIC (SO-8) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] β€”
Lead-Free / RoHS Yes (PBF suffix = Pb-free) β€”
Packaging Tape & Reel (TR suffix) β€”
Configuration N-Channel + P-Channel (complementary half-bridge) Dual N+P Complementary Half-Bridge
Transistor Polarity β€” N and P Channel
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (N-Ch, Id) β€” 7.3 A
Continuous Drain Current (P-Ch, Id) β€” -5.3 A
On-Resistance RDS(on) Max β€” 29 mOhm
Power Dissipation (Pd) β€” 2.5 W
Package β€” 8-SO (SOIC-8)
Operating Temperature β€” -55C to +150C
Avalanche Rated β€” Yes
Lead Free / RoHS β€” Lead Free / RoHS Compliant
MSL Level β€” 1

Datasheets & Resources

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