IRF7319TRPBF vs IRFR9120NTRPBF Comparison
Detailed side-by-side comparison of IRF7319TRPBF by Infineon and IRFR9120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7319TRPBF | IRFR9120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | β |
| Technology | IR MOSFET / Fifth Generation HEXFET | HEXFET fifth-generation IR MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current N-channel (ID) | 6.5 A | β |
| Continuous Drain Current P-channel (ID) | 4.9 A | β |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | β |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | β |
| Total Power Dissipation (PD) | 2 W | β |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | β |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | β |
| Package Type | 8-SOIC (SO-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | β |
| Packaging | Tape & Reel (TR suffix) | β |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TC=25C | β | -6.6 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max at VGS=-10V | β | 480 milliohm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) | β | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | β | 40 W |
| Operating Junction Temperature Range | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC] |
| Package | β | TO-252AA (DPAK), surface mount |
| MSL Level | β | 1 (unlimited floor life) |
| Lead Finish / Plating | β | Pb-free (PBF suffix), Matte Tin |
| RoHS Status | β | Compliant |
| Moisture Sensitivity | β | MSL1 per JEDEC J-STD-020 |