IRF7342PBF vs IRF7313TRPBF Comparison

Detailed side-by-side comparison of IRF7342PBF by Infineon and IRF7313TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7342PBF IRF7313TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.27
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Part Number IRF7342PBF IRF7313TRPBF
Original Mfr International Rectifier (now Infineon) β€”
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET Generation V (HEXFET Fifth Generation)
Configuration Dual P-Channel (2 independent MOSFETs) β€”
Drain-Source Voltage V(DSS) -55 V β€”
Continuous Drain Current I(D) 3.4 A β€”
On-Resistance R(DS(on)) 0.105 ohm β€”
Power Dissipation P(D) 2 W β€”
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (SO-8) β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55C to +150C (junction)
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] β€”
Switching Frequency Optimization < 100 kHz β€”
RoHS Status Compliant β€”
Halogen Status Halogen-Free β€”
Qualification JEDEC standard β€”
Transistor Configuration β€” Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max β€” 30 V
Continuous Drain Current (ID) max β€” 6.5 A per channel
On-Resistance (RDS(on)) max β€” 29 mOhm at VGS=10V
Power Dissipation (PD) max β€” 2 W
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: Β±V rating]
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (typical range)
Package β€” 8-pin SOIC (SO-8) surface mount
Lead-Free / Pbf β€” Yes (lead-free plating)
Avalanche Rated β€” Yes
MSL Level β€” 1
Qualification Standard β€” Consumer market (per IR datasheet)
Shipping Media β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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