IRF7342PBF vs IRF7343TRPBF Comparison

Detailed side-by-side comparison of IRF7342PBF by Infineon and IRF7343TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF βœ“ Active

Specification Comparison

Parameter IRF7342PBF IRF7343TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.62
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF7342PBF β€”
Original Mfr International Rectifier (now Infineon) β€”
Technology HEXFET (Gen V) - P-Channel MOSFET Array IR MOSFET (HEXFET Generation V)
Configuration Dual P-Channel (2 independent MOSFETs) β€”
Drain-Source Voltage V(DSS) -55 V β€”
Continuous Drain Current I(D) 3.4 A β€”
On-Resistance R(DS(on)) 0.105 ohm β€”
Power Dissipation P(D) 2 W β€”
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (SO-8) β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Gate Threshold Vgs(th) [DATA_NEEDED: Vgs(th)] β€”
Switching Frequency Optimization < 100 kHz β€”
RoHS Status Compliant β€”
Halogen Status Halogen-Free β€”
Qualification JEDEC standard β€”
Part Status β€” Active
Transistor Type β€” N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel β€” 55 V
Drain-to-Source Voltage (VDS) - P-Channel β€” 55 V
Continuous Drain Current (ID) - N-Channel β€” 4.7 A
Continuous Drain Current (ID) - P-Channel β€” 3.4 A
On-Resistance (RDS(on)) - N-Channel β€” 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max β€” 50 mOhm
Power Dissipation (PD) β€” 2 W
Package β€” 8-SOIC (SO-8)
Lead-Free β€” Yes
RoHS Compliance β€” Compliant

Datasheets & Resources

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