IRF7342TRPBF vs IRF7342PBF Comparison

Detailed side-by-side comparison of IRF7342TRPBF by Infineon and IRF7342PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7342TRPBF IRF7342PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.89
Part Number IRF7342TRPBF IRF7342PBF
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel HEXFET (Gen V) - P-Channel MOSFET Array
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) Dual P-Channel (2 independent MOSFETs)
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) -3.4 A at 25 C β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) β€”
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V β€”
Maximum Power Dissumption (Pd) 2 W β€”
Operating Temperature Range -55 C to +150 C (Tj) [DATA_NEEDED: operating temperature range]
Package 8-SOIC (SO-8), surface mount β€”
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR) β€”
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) β€”
Channel Type P-Channel (enhancement mode) β€”
Number of Channels 2 (dual array) β€”
Original Mfr β€” International Rectifier (now Infineon)
Drain-Source Voltage V(DSS) β€” -55 V
Continuous Drain Current I(D) β€” 3.4 A
On-Resistance R(DS(on)) β€” 0.105 ohm
Power Dissipation P(D) β€” 2 W
Package / Case β€” 8-SOIC (SO-8)
Gate Threshold Vgs(th) β€” [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization β€” < 100 kHz
RoHS Status β€” Compliant
Halogen Status β€” Halogen-Free
Qualification β€” JEDEC standard

Datasheets & Resources

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