IRF7343TRPBF vs IRF7342PBF Comparison

Detailed side-by-side comparison of IRF7343TRPBF by Infineon and IRF7342PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF βœ“ Active

Specification Comparison

Parameter IRF7343TRPBF IRF7342PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.89
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Status Active β€”
Transistor Type N and P-Channel Complementary MOSFET Array β€”
Technology IR MOSFET (HEXFET Generation V) HEXFET (Gen V) - P-Channel MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel 55 V β€”
Drain-to-Source Voltage (VDS) - P-Channel 55 V β€”
Continuous Drain Current (ID) - N-Channel 4.7 A β€”
Continuous Drain Current (ID) - P-Channel 3.4 A β€”
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) β€”
On-Resistance (RDS(on)) max 50 mOhm β€”
Power Dissipation (PD) 2 W β€”
Package 8-SOIC (SO-8) β€”
Mounting Type Surface Mount Surface Mount
Lead-Free Yes β€”
RoHS Compliance Compliant β€”
Part Number β€” IRF7342PBF
Original Mfr β€” International Rectifier (now Infineon)
Configuration β€” Dual P-Channel (2 independent MOSFETs)
Drain-Source Voltage V(DSS) β€” -55 V
Continuous Drain Current I(D) β€” 3.4 A
On-Resistance R(DS(on)) β€” 0.105 ohm
Power Dissipation P(D) β€” 2 W
Package / Case β€” 8-SOIC (SO-8)
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Gate Threshold Vgs(th) β€” [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization β€” < 100 kHz
RoHS Status β€” Compliant
Halogen Status β€” Halogen-Free
Qualification β€” JEDEC standard

Datasheets & Resources

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