IRF7351TRPBF vs FDS6575 Comparison
Detailed side-by-side comparison of IRF7351TRPBF by Infineon and FDS6575 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7351TRPBF | FDS6575 |
|---|---|---|
| Brand | Infineon | onsemi |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.28 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7351TRPBF | β |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | Single MOSFET |
| Drain-Source Voltage (VDS) | 60 V | -20 V |
| Continuous Drain Current (ID) | 8 A | -10 A |
| On-Resistance RDS(on) max | 17.8 mOhm | β |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | β |
| Total Gate Charge (Qg) | 24 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) | 2 W | β |
| Technology | IR MOSFET (HEXFET trench) | PowerTrench (rugged gate) |
| Package | 8-SO (SO-8 / SOIC-8) Surface Mount | SOIC-8 (SO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | β |
| RoHS Status | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL Level] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | β |
| Polarity | β | P-Channel |
| On-Resistance (RDS(on)) | β | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | β | 2.5 V to 8 V |
| Gate Threshold Voltage | β | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | β | [DATA_NEEDED: power dissipation at TA] |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Gate Source Voltage (VGS) Range | β | [DATA_NEEDED: VGS max rating] |