IRF7380TRPBF vs IRF7854TRPBF Comparison
Detailed side-by-side comparison of IRF7380TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7380TRPBF | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7380TRPBF | β |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) | 3.6 A | β |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | β |
| Technology | IR MOSFETβ’ (Infineon HEXFET-style planar N-ch) | HEXFET (planar N-channel) |
| Total Power Dissipation (PD) | 2 W | β |
| Package | SO-8 (8-SO, SOIC-8) | SO-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C | β |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | β |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | Yes (PBF suffix, lead-free) |
| Packaging | Tape & Reel (suffix TR) | β |
| Primary Application | High-frequency DC-DC converters | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 10 A |
| Power Dissipation (PD) at Ta=25Β°C | β | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | β | 13.4 mΞ© |
| Gate-Source Threshold Voltage VGS(th) max | β | 4.9 V |
| Total Gate Charge Qg | β | 27 nC |
| Operating Temperature Range | β | -55Β°C to +150Β°C (TJ) |
| Qualification | β | JEDEC industrial, Normal level |
| Solder Process | β | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | β | 10 V |