IRF7380TRPBF - Dual N-Ch 80V 3.6A MOSFET, SO-8 | Infineon
MPN: IRF7380TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.72 | $7.20 |
| 100 | $0.55 | $55.00 |
| 500 | $0.43 | $215.00 |
| 1,000 | $0.37 | $370.00 |
| 2,500 | $0.32 | $800.00 |
IRF7380TRPBF Overview
A dual N-channel MOSFET array (sometimes called a "half-bridge companion" or "synchronous-rectifier pair in one package") is a power-management building block that integrates two independently-controlled N-channel MOSFETs into a single SMD outline. By co-packaging the high-side and low-side switches of a buck or synchronous-rectified converter, this category shrinks the converter's PCB footprint, simplifies gate-drive routing, and reduces parasitic loop inductance between the two FETs - all of which translate directly into lower switching losses and cleaner EMI. Within the broader taxonomy, it sits as: dual MOSFET array -> MOSFET array -> power MOSFET -> discrete semiconductor -> power management building block.
Key features of the IRF7380TRPBF include: industry-low on-resistance per cell, low gate charge for fast switching transitions, integrated ESD protection on the gate, RoHS-compliant lead-free plating, and a wide -55C to +150C operating junction temperature range. The SO-8 package offers an exposed copper lead frame that conducts heat to the PCB copper pour, allowing moderate continuous dissipation without an external heatsink. The device is also characterized for avalanche energy, making it rugged against inductive flyback events in converter and motor-drive applications.
The IRF7380TRPBF's primary use cases are high-frequency DC-DC converters (buck, boost, and synchronous-rectified topologies), load switches in distributed power architectures, and motor-drive low-side switches in small BLDC or stepper systems. The 80 V rating gives ample headroom for 24 V industrial buses and 48 V telecom rails, while the 3.6 A continuous rating comfortably supports sub-100 W converter stages. Designers typically pair it with a dedicated gate driver (such as the Infineon IR2104) to fully exploit its switching-speed capability.
When designing with the IRF7380TRPBF, pay particular attention to gate-drive voltage - the full RDS(on) spec assumes VGS = 10 V, so 3.3 V or 5 V logic-level microcontrollers must be paired with a gate-driver IC. Adequate PCB copper pour under the SO-8 thermal pad is critical: at 2 W dissipation, junction-to-ambient thermal resistance will dominate reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRF7380TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7380TRPBF (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, Configuration, Continuous Drain Current (ID).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7380PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7341GTRPBF
✅ Drop-In✓ In Stock
$0.76 / Unit
View Datasheet →IRF7854TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →VBA3860
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7301TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7469TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.37 / Unit
View Datasheet →IRF7380TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7380TRPBF |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) |
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 3.6 A |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) |
| Total Power Dissipation (PD) | 2 W |
| Package | SO-8 (8-SO, SOIC-8) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) |
| Packaging | Tape & Reel (suffix TR) |
| Primary Application | High-frequency DC-DC converters |
IRF7380TRPBF Pin Configuration
| Pin 1 | S1 — Source, MOSFET 1 |
| Pin 2 | G1 — Gate, MOSFET 1 |
| Pin 3 | S2 — Source, MOSFET 2 |
| Pin 4 | G2 — Gate, MOSFET 2 |
| Pin 5 | D2 — Drain, MOSFET 2 |
| Pin 6 | D2 — Drain, MOSFET 2 (parallel pin for thermal/electrical) |
| Pin 7 | D1 — Drain, MOSFET 1 |
| Pin 8 | D1 — Drain, MOSFET 1 (parallel pin for thermal/electrical) |
Safe Operating Area (SOA)
Typical Applications
IRF7380TRPBF is suitable for 7 applications: High-Frequency Synchronous Buck DC-DC Converter, 24V Industrial Load Switch, Battery Management System (BMS) Discharge Path, LED Driver and Lighting Power Stage, Small Motor Drive (BLDC / Stepper / DC), Solar MPPT / Photovoltaic Low-Side Switch, Telecom / Networking Point-of-Load Regulator.
High-Frequency Synchronous Buck DC-DC Converter
The IRF7380TRPBF is designed primarily as a co-packaged low-side and high-side pair for synchronous-rectified buck converters in the 12-48 V input range. With VDS = 80 V it covers 24 V industrial rails with substantial derating, while 3.6 A per channel supports sub-100 W converter stages. The IR MOSFET process delivers low gate charge for fast switching at 200-500 kHz, minimizing switching losses. Placing the two FETs in one SO-8 shrinks the converter loop inductance versus two discrete SOT-23 parts, directly reducing voltage overshoot and EMI. Use the IRF7380TRPBF when you need a compact, two-FET-in-one solution for telecom brick converters, industrial POL rails, or solar MPPT low-side switches.
Recommended
24V Industrial Load Switch
The IRF7380TRPBF suits 24 V industrial load-switch applications where two independent channels are needed in a small footprint. Each integrated N-channel FET handles 3.6 A continuous - enough for solenoid valves, fan drivers, or peripheral power rails inside PLC and industrial-control modules. The 80 V VDS rating gives 3x derating margin on a 24 V bus, withstanding load-dump transients common in industrial environments. The SO-8 footprint and tape-and-reel packaging enable high-density pick-and-place assembly. Designers can use one FET for a high-side switch (with charge pump) and the other for a low-side indicator or redundant channel, optimizing BOM count.
Recommended
Battery Management System (BMS) Discharge Path
In multi-cell battery packs, the IRF7380TRPBF provides a compact dual-FET discharge control solution for 12-48 V lithium or lead-acid systems. The 80 V VDS rating supports 12S Li-ion packs (nominally 50.4 V fully charged) with comfortable headroom. Each channel's 3.6 A rating is appropriate for low-to-medium current packs (under 1 kW discharge), such as e-bike, portable medical, or small UPS batteries. Using a single SO-8 instead of two discretes cuts PCB area and trace parasitic inductance - critical for clean current-sensing on the shunt resistor. For higher-current packs, parallel multiple IRF7380TRPBF channels or move to TO-220 packages.
Recommended
LED Driver and Lighting Power Stage
Architectural and commercial LED drivers in the 24-48 V input class benefit from the IRF7380TRPBF's dual-FET integration. One channel can serve as the main switching FET in a buck-topology LED driver, while the second channel implements synchronous rectification - a two-FET-in-one-SO-8 arrangement that simplifies PCB layout and shrinks the BOM. The 3.6 A per-channel rating comfortably drives LED strings up to 100 W (at appropriate VDS), and the IR MOSFET low-FOM characteristic keeps switching losses manageable at 100-300 kHz PWM dimming frequencies. For flicker-free dimming, gate-drive quality is critical; pair with a dedicated driver rather than direct MCU drive.
Recommended
Small Motor Drive (BLDC / Stepper / DC)
The IRF7380TRPBF's dual N-channel configuration is naturally suited to low-side switching in small brushed-DC, stepper, or BLDC motor drives. Each channel can sink 3.6 A continuously, supporting small 24 V BLDC fans, pumps, or hobby motors up to ~80 W. In a stepper application, the two integrated FETs can each drive one phase's low-side path, halving the PCB area versus four discrete SO-8 parts. For bidirectional full-bridge control, two IRF7380TRPBF devices (4 FETs total) realize a complete H-bridge in 32 mm^2 of board area - significantly smaller than equivalent discrete designs.
Recommended
Solar MPPT / Photovoltaic Low-Side Switch
In small-scale photovoltaic (PV) systems, the IRF7380TRPBF can serve as a low-side synchronous-rectifier FET in MPPT buck or buck-boost converters handling 30-60 V panel open-circuit voltages. Its 80 V VDS gives 25-50% derating margin on Voc strings, important for cold-morning Voc rises that can exceed nominal panel specs. The 3.6 A continuous rating supports sub-200 W charge controllers for off-grid solar, weather stations, or IoT solar nodes. The dual-FET SO-8 integration is particularly attractive in space-constrained pole-mounted enclosures where reliability and thermal dissipation through the PCB copper pour are paramount.
Recommended
Telecom / Networking Point-of-Load Regulator
Inside telecom and networking equipment, -48 V input rails require post-regulation to sub-rack voltages like 12 V, 5 V, or 3.3 V at moderate currents. The IRF7380TRPBF's 80 V VDS gives comfortable derating on a -48 V rail (positive 48 V ground-referenced), while the dual N-channel integration fits a synchronous buck topology perfectly. Each 3.6 A channel supports 100-150 W POL converters, appropriate for line cards, mid-power PoE injectors, or small base-station modules. Use the second channel as the synchronous-rectifier FET, enabling >95% efficiency at 200 kHz without resorting to more expensive GaN parts.
Recommended
Recommended Products Summary
Engineering reference data for IRF7380TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7380PBF | IRF7341GTRPBF | VBA3860 | IRF7301TRPBF |
|---|---|---|---|---|---|
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 80 V | 80 V | 55 V | 80 V | 20 V |
| On-Resistance RDS(on) max | 73 mOhm at VGS=10V | 73 mOhm at VGS=10V | 50 mOhm at VGS=10V | 62 mOhm at VGS=10V | 30 mOhm at VGS=10V |
| Packaging | Tape & Reel | Tube | Tape & Reel | Tape & Reel | Tape & Reel |
| Approx. Unit Price (qty 1) | $0.85 | $0.95 | $0.78 | $0.45 | $0.65 |
Key Differentiators
- 15% lower on-resistance in the same SO-8 footprint (vs VBA3860)
- Higher VDS rating for industrial / 48 V rails (vs IRF7341GTRPBF)
- Dual N-channel in SO-8 vs single FET alternative (vs IRF7469TRPBF)
Design Notes
Estimated: at ID = 3.6 A and RDS(on) = 0.073 Ohm, each FET dissipates I^2 × R = 0.95 W. Both FETs in the SO-8 share a 2 W package limit, so continuous 3.6 A on both channels simultaneously exceeds the thermal budget at 25 C ambient without a substantial PCB copper pour. Per the Infineon IRF7380 datasheet, the SO-8 package has theta_JA around 50 C/W on a standard 1 oz 4-layer board with 1 sq inch copper; this limits total dissipation to roughly 1.5-2 W before derating begins. For full-load operation, expand the drain copper pour (pins 5-8) to at least 2 square inches and use multiple thermal vias to inner copper planes.
The IRF7380TRPBF is not a logic-level MOSFET. The full RDS(on) spec of 73 mOhm assumes VGS = 10 V; driving the gate directly from a 3.3 V or 5 V microcontroller will leave the FET in partial enhancement with RDS(on) potentially 2-3x higher, dramatically increasing conduction losses and heat. Always pair the IRF7380TRPBF with a gate-driver IC (such as the Infineon IR2104) capable of producing 10 V gate drive. The datasheet explicitly warns that VGS(th) is in the 2-4 V range, so 5 V drive is borderline.
For switching-converter layouts using the IRF7380TRPBF, minimize the high-frequency loop area between MOSFET 1's drain (pins 7-8) and MOSFET 2's source (pin 3) - this is the switching power loop. Keep input bypass capacitors (typically 1-10 uF ceramic + 100 uF bulk) within 5 mm of the SO-8. The exposed drain pads (5-8) double as thermal reliefs; stitch them with multiple thermal vias to inner copper planes for heat extraction. Keep gate-drive traces short (under 10 mm) and route them away from the switching node to avoid capacitive coupling that causes Miller-effect turn-on.
Compliance Information
Lead-free (Pb-free) per PBF suffix in MPN, RoHS compliant per DigiKey listing. Not AEC-Q100 qualified - this part targets industrial/commercial use, not automotive. For automotive applications, look at Infineon's automotive-grade MOSFET portfolio.
