IRF7416TRPBF vs FDS6575 Comparison

Detailed side-by-side comparison of IRF7416TRPBF by Infineon and FDS6575 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF βœ“ Active

Specification Comparison

Parameter IRF7416TRPBF FDS6575
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.28
FET Type P-Channel β€”
Technology HEXFET (IR MOSFET) PowerTrench (rugged gate)
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) at TA=25C -10 A β€”
Pulsed Drain Current (IDM) -50 A β€”
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V β€”
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) -1 V to -3 V β€”
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) max at TA=25C 2.5 W β€”
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W β€”
Operating Junction Temperature Range -55 C to +150 C β€”
Package 8-SO (SOIC-8) SOIC-8 (SO-8)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level 1 (unlimited) β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -20 V
Continuous Drain Current (ID) β€” -10 A
On-Resistance (RDS(on)) β€” 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range β€” 2.5 V to 8 V
Gate Threshold Voltage β€” [DATA_NEEDED: gate threshold voltage range]
Power Dissipation β€” [DATA_NEEDED: power dissipation at TA]
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Configuration β€” Single MOSFET
Gate Source Voltage (VGS) Range β€” [DATA_NEEDED: VGS max rating]

Datasheets & Resources

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