IRF7749L1TRPBF vs BSC0906NSATMA1 Comparison
Detailed side-by-side comparison of IRF7749L1TRPBF by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF7749L1TRPBF
IRF7749L1TRPBF - 60V N-Channel HEXFET MOSFET DirectFET L8
IRF7749L1TRPBF β ActiveInfineon
BSC0906NSATMA1
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
BSC0906NSATMA1 β ActiveSpecification Comparison
| Parameter | IRF7749L1TRPBF | BSC0906NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7749L1TRPBF | β |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET / IR MOSFET | OptiMOS |
| Drain-to-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25 C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25 C | 200 A | β |
| Gate-to-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) | 2.9 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Drain-Source On-Resistance RDS(on) max | 1.5 mOhm at VGS=10 V | β |
| Drain-Source On-Resistance RDS(on) typ | 1.1 mOhm at VGS=10 V | β |
| Total Gate Charge (Qg) | 200 nC max | [DATA_NEEDED: Qg @ VGS=10V] |
| Gate-Drain Charge (Qgd) typ | 71 nC | β |
| Power Dissipation (Ptot) at TC=25 C | 125 W | β |
| Power Dissipation (Ptot) at TA=25 C | 3.3 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 45 K/W max | β |
| Package | DirectFET Isometric L8 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (per JEDEC J-STD-020) | β |
| Polarity | N-Channel | β |
| Configuration | Single | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 63 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 30 W |
| RDS(on) max (typical reference) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Operating Temperature Range | β | -55C to +150C (junction, typical) |
| Pin Count | β | 8 |
| RoHS Status | β | Compliant |