IRF7749L1TRPBF - 60V N-Channel HEXFET MOSFET DirectFET L8
MPN: IRF7749L1TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.04 | $1,040.00 |
| 4,000 | $0.88 | $3,520.00 |
IRF7749L1TRPBF Overview
A power MOSFET is a voltage-controlled metal-oxide-semiconductor field-effect transistor designed to switch or amplify power in electronic systems. The IRF7749L1 belongs to the HEXFET Power MOSFET family, a N-Channel enhancement-mode device in the DirectFET (L8 isometric) surface-mount package. The DirectFET package provides a top-side cooling path through a metal can, dramatically lowering thermal resistance compared to standard SO-8 or DPAK packages, which is critical for high-current DC-DC conversion where every milliohm of RDS(on) counts.
Key features include an ultra-low typical on-resistance of 1.1 mOhm at VGS=10 V, a 2.9 V minimum gate-threshold rating optimized for logic-level and standard 5 V gate drive, and a continuous drain current of 200 A at TC. The device also offers a low total gate charge of 200 nC maximum, a maximum drain-source voltage of 60 V, and a junction-to-ambient thermal resistance of 45 K/W. The DirectFET L8 package allows top-side cooling via the metal can.
The IRF7749L1 is built on Infineon's IR MOSFET silicon technology with an optimized cell structure that minimizes RDS(on) per unit area while maintaining avalanche ruggedness. The DirectFET L8 isometric package eliminates wire bonds and exposes the silicon die directly to a top-side metal can for double-sided cooling, which improves both thermal performance and current-handling density. The 2.9 V gate threshold ensures clean enhancement with low-voltage gate drivers and microcontrollers.
Typical applications include synchronous rectification in high-current DC-DC converters, high-density VRM and POL modules for servers and datacenters, OR-ing FETs in redundant power systems, hot-swap controllers on 48 V telecom boards, and high-current motor drive bridges. The combination of 1.1 mOhm RDS(on) and DirectFET thermal performance makes it ideal for point-of-load converters requiring high efficiency at >30 A per phase.
When designing with this part, observe the SOA carefully because pulsed drain current of 200 A is only achievable with substantial case cooling; at TA=25 C with minimum footprint copper, expect continuous current closer to 33 A. The DirectFET L8 footprint requires precise land pattern adherence per Infineon's application note, and a top-side thermal pad or heatsink should be considered for high-duty-cycle operation.
This page synthesizes distributor pricing, drop-in alternatives, and DirectFET-specific design notes not found in the manufacturer datasheet alone, helping engineers evaluate the IRF7749L1TRPBF for high-current DC-DC applications.
Drop-in alternatives for IRF7749L1TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7749L1TRPBF (same form factor and footprint) β differing in Drain-to-Source Voltage (VDS), Package, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7799L1TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7749L1TRPBF
β Drop-Inβ In Stock
$0.88 / Unit
View Datasheet βIRF7749L1TRPBF
β Drop-Inβ In Stock
$0.88 / Unit
View Datasheet βIRF7749L1TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7749L1TRPBF |
| FET Type | N-Channel |
| Technology | HEXFET / IR MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA=25 C | 33 A |
| Pulsed Drain Current (IDM) at TC=25 C | 200 A |
| Gate-to-Source Voltage (VGS) max | 20 V |
| Gate Threshold Voltage (VGS(th)) | 2.9 V |
| Drain-Source On-Resistance RDS(on) max | 1.5 mOhm at VGS=10 V |
| Drain-Source On-Resistance RDS(on) typ | 1.1 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | 200 nC max |
| Gate-Drain Charge (Qgd) typ | 71 nC |
| Power Dissipation (Ptot) at TC=25 C | 125 W |
| Power Dissipation (Ptot) at TA=25 C | 3.3 W |
| Operating Junction Temperature | -55 C to +175 C |
| Thermal Resistance Junction-to-Ambient (RthJA) | 45 K/W max |
| Package | DirectFET Isometric L8 |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (per JEDEC J-STD-020) |
| Polarity | N-Channel |
| Configuration | Single |
| Lead-Free / RoHS | Yes / Compliant |
IRF7749L1TRPBF Pin Configuration
| Pin 1 | Source β Source pad (large bottom pad) |
| Pin 2 | Gate β Gate drive input |
| Pin 3 | Drain β Drain pad (bottom) |
| Pin Top | Metal Can β Drain-connected top metal can for heatsinking (DirectFET L8 isometric) |
Safe Operating Area - IRF7749L1TRPBF (TC=25C)
Typical Applications
IRF7749L1TRPBF is suitable for 6 applications: Synchronous Rectification in 48V DC-DC Converters, High-Density VRM and POL Modules, OR-ing FET in Redundant Power Systems, Hot-Swap Controller Switch, Brushless DC Motor Drive Bridge, Battery Protection and Load Switch.
Synchronous Rectification in 48V DC-DC Converters
The IRF7749L1TRPBF's 1.1 mOhm typical RDS(on) at VGS=10 V and 60 V VDS rating make it ideal for synchronous-rectifier low-side FETs in 48 V to 12 V bus converters used in telecom and datacom systems. At 33 A continuous drain current the conduction loss is only approximately 1.2 W (estimated using I^2*RDS(on)), and the DirectFET L8 isometric package enables top-side cooling that SO-8 alternatives cannot match. The 200 nC total gate charge supports switching frequencies above 300 kHz, enabling high-density point-of-load designs where both footprint and thermal performance are critical.
Recommended
High-Density VRM and POL Modules
For Voltage Regulator Module (VRM) and Point-of-Load (POL) applications above 30 A per phase, the IRF7749L1TRPBF provides the low RDS(on) and DirectFET thermal performance needed to meet tight efficiency targets. The 45 K/W RthJA keeps junction temperature rise modest on standard 4-layer PCB copper, while the metal-can top of the L8 package accepts an optional heatsink for higher-phase-count designs. Per Infineon's application notes, this combination is widely used in server and datacenter VRM designs where efficiency at high current density is paramount.
Recommended
OR-ing FET in Redundant Power Systems
The IRF7749L1TRPBF can serve as an OR-ing MOSFET in N+1 redundant -48 V telecom power architectures, replacing Schottky diodes with active switching to reduce conduction loss from 0.5 V to just 33 mV at 30 A. The 60 V VDS provides adequate margin for -48 V nominal rails with transient spikes, and the 2.9 V gate threshold allows simple MOSFET-driver ICs to control reverse-current blocking. The DirectFET L8 isometric footprint supports the high continuous current and dissipation levels typical of always-on redundant paths in telecom infrastructure.
Recommended
Hot-Swap Controller Switch
In 48 V hot-swap and eFuse applications, the IRF7749L1TRPBF acts as the main series-pass element, controlling inrush current and providing circuit protection during board insertion. Its 1.5 mOhm max RDS(on) limits voltage drop under full load, and the 200 A pulsed rating tolerates transient inrush surges beyond continuous rating. The DirectFET L8 package dissipates the resulting I^2*R heat through top-side cooling, which is critical when the part sits inside a thermally-constrained chassis slot.
Recommended
Brushless DC Motor Drive Bridge
The IRF7749L1TRPBF suits BLDC motor drive half-bridge and three-phase inverter stages up to 60 V battery systems in e-bikes, drones, and battery-powered tools. Its 200 A pulsed current rating handles motor startup surges, while the 1.1 mOhm typical RDS(on) minimizes conduction loss during high-torque operation. The DirectFET L8 isometric footprint and 45 K/W RthJA support continuous motor current up to 30 A with adequate PCB copper area, while the 2.9 V gate threshold works with 5 V gate drivers commonly used in motor-control MCUs.
Recommended
Battery Protection and Load Switch
For battery-pack protection and high-side load switching in 24-48 V battery systems, the IRF7749L1TRPBF provides ultra-low RDS(on) for minimal voltage drop and high efficiency. The 60 V VDS rating tolerates transient voltage spikes during load dump, while the 200 nC gate charge supports PWM dimming or current-limit modulation at moderate switching frequencies. Its DirectFET L8 isometric package, MSL 1 rating, and lead-free reflow compatibility simplify high-volume manufacturing in Li-ion battery management designs.
Recommended
Recommended Products Summary
Engineering reference data for IRF7749L1TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7799L1TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 - same |
| Drain-to-Source Voltage (VDS) | 60 V | 75 V |
| Continuous Drain Current at TA=25 C | 33 A | 33 A |
| Pulsed Drain Current at TC=25 C | 200 A | 200 A |
| RDS(on) max at VGS=10 V | 1.5 mOhm | 1.8 mOhm |
| Gate Threshold (VGS(th)) | 2.9 V max | 2.9 V max |
| Total Gate Charge (Qg) | 200 nC max | 240 nC max |
| Thermal Resistance RthJA | 45 K/W | 45 K/W |
| Price (qty 1, USD, as of 2026-09-13) | 1.85 | 1.95 |
Key Differentiators
- Ultra-low 1.1 mOhm typical RDS(on) at VGS=10 V (vs IRF7799L1TRPBF (1.8 mOhm max at 75V VDS))
- Low 200 nC total gate charge for high-frequency switching (vs IRF7799L1TRPBF (240 nC typical Qg))
- DirectFET L8 isometric package with top-side cooling (vs Standard SO-8 MOSFETs in the same 60V/30A class)
Design Notes
Estimated: at 33 A continuous drain current and 1.1 mOhm typical RDS(on), the device dissipates roughly 1.2 W. With RthJA of 45 K/W, junction temperature rises ~54 C above ambient, keeping Tj below 150 C at 25 C ambient. Per Infineon's DirectFET application note, top-side heatsinking via the L8 metal can is required for continuous operation above ~2 W. Use thermal vias under the source pad and a copper heatsink clip for additional margin in high-current POL designs.
The DirectFET L8 isometric land pattern is Infineon-proprietary and MUST follow Infineon's reference footprint exactly. Use NSMD pads with solder mask defined on the source pad only, and add 8-12 thermal vias in 0.3 mm drill pattern under the source pad to spread heat into inner copper planes. Gate trace should be routed with minimal loop area to the gate-driver IC to avoid gate-oscillation and ringing; add a 10 ohm gate-source resistor to dampen the L-C resonance of the gate trace and the MOSFET's input capacitance.
Place the gate driver as close as possible to the gate pad to minimize parasitic inductance. Use a Kelvin-source connection where the gate driver's return path ties directly to the source pad rather than to a remote ground. For switching frequencies above 200 kHz, separate the power loop (drain-source) from the gate-driver loop and use a small RC snubber (e.g. 10 ohm + 1 nF) across drain-source if ringing exceeds 20% of VDS. Per Infineon's DirectFET design guide, this layout discipline is critical to achieving full bandwidth of the L8's switching performance.
Do not exceed 20 V on the gate pin, even transiently, as the gate oxide can be permanently damaged. Do not operate the MOSFET in linear mode at high current for extended periods - the SOA curve limits DC operation to roughly 125 W at low VDS. Verify that VGS stays above 6 V during full enhancement to achieve the published 1.5 mOhm max RDS(on); at VGS=4.5 V the on-resistance can rise 2-3x, dramatically increasing conduction loss. The DirectFET L8 metal can is electrically connected to the drain - do not allow it to touch other conductive surfaces.
Compliance Information
RoHS and REACH compliant per Infineon product page; lead-free per 'PBF' suffix. MSL 1 rating per JEDEC J-STD-020. Not AEC-Q100 qualified - choose automotive-grade HEXFET variants for vehicle applications.
