IRF7832TRPBF vs IRF8736TRPBF Comparison
Detailed side-by-side comparison of IRF7832TRPBF by Infineon and IRF8736TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7832TRPBF | IRF8736TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.27 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7832TRPBF | β |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (trench MOSFET) | StrongIRFET / HEXFET |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 20 A | 18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | β |
| Total Gate Charge (Qg) typical | 34 nC | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ) | -55C to +150C (junction) |
| Package | 8-SO (SOIC-8) | SO-8 (8-SO, MS-012AA) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Power Dissipation (PD) Max at TA=25C | β | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | β | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | β | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | β | Yes (fully characterized avalanche voltage) |
| Configuration | β | Single |
| Packaging | β | Tape & Reel (TRPBF suffix) |