IRF7854TRPBF vs IRF7380TRPBF Comparison
Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRF7380TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7854TRPBF | IRF7380TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.32 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 10 A | β |
| Power Dissipation (PD) at Ta=25Β°C | 2.5 W | β |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΞ© | β |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | β |
| Total Gate Charge Qg | 27 nC | β |
| Package | SO-8 | SO-8 (8-SO, SOIC-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFETβ’ (Infineon HEXFET-style planar N-ch) |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | β |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | Yes (Pb-free plating, suffix PBF) |
| Qualification | JEDEC industrial, Normal level | β |
| Solder Process | Reflow and wave-solderable | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF7380TRPBF |
| Configuration | β | Dual N-Channel MOSFET Array (2 independent FETs in one package) |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) | β | 3.6 A |
| On-Resistance RDS(on) max | β | 73 mOhm at VGS = 10 V |
| Total Power Dissipation (PD) | β | 2 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| Gate Drive Voltage (typical) | β | 10 V (full RDS(on)); logic-level not guaranteed |
| Packaging | β | Tape & Reel (suffix TR) |
| Primary Application | β | High-frequency DC-DC converters |