IRF7854TRPBF vs IRF7495TRPBF Comparison
Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRF7495TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7854TRPBF | IRF7495TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.65 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 10 A | β |
| Power Dissipation (PD) at Ta=25Β°C | 2.5 W | β |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΞ© | β |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | β |
| Total Gate Charge Qg | 27 nC | β |
| Package | SO-8 | 8-SOIC (SO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET (HEXFET) |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55 C to +150 C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Qualification | JEDEC industrial, Normal level | β |
| Solder Process | Reflow and wave-solderable | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at TA=25 C | β | 7.3 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 22 mOhm |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Total Gate Charge (Qg) Typ | β | 34 nC at 10 V |
| Input Capacitance (Ciss) Max | β | 1530 pF at 25 V |
| Power Dissipation (PD) Max at TA=25 C | β | 2.5 W |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Estimated EOL Date | β | 2027 |
| ECCN | β | EAR99 |