IRF7495TRPBF - 100V 7.3A N-Channel MOSFET | Infineon
MPN: IRF7495TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
IRF7495TRPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch used in power conversion circuits. The N-channel enhancement-mode MOSFET sits within the broader hierarchy of power discrete semiconductors: MOSFET -> transistor -> discrete semiconductor -> semiconductor. Within power-electronics subsystems, N-channel MOSFETs such as the IRF7495TRPBF typically serve as low-side or high-side switches in DC-DC converters, motor drivers, and load-switching paths, replacing older bipolar transistors because they require essentially no steady-state gate drive current.
Key parametric strengths include a maximum drain-source voltage of 100 V, continuous drain current of 7.3 A at TA=25 C, and pulsed drain current capability suitable for transient loads. The device features an ultra-low gate charge of 34 nC typical and maximum RDS(on) of 22 mOhm at VGS=10 V, ID=4.4 A. These parameters translate to lower conduction losses and reduced gate-drive requirements, which simplifies the upstream PWM controller selection.
Architecturally, the IRF7495TRPBF uses a planar-style trenchFET-class cell design with a low figure-of-merit (RDS(on) x Qg) optimized for synchronous rectification. The fully characterized capacitance profile, including effective COSS, simplifies the calculation of dead-time and resonant-tank behavior in LLC, half-bridge, and active-clamp forward topologies. The standard SO-8 footprint allows direct drop-in replacement into existing layouts without PCB rework.
Typical applications include high-frequency DC-DC converters (synchronous-rectifier and primary-side switch), high-side load switches in telecom and networking equipment, battery protection circuits in 12 V to 36 V packs, and motor-drive H-bridges up to a few hundred watts. The 100 V rating provides adequate margin for 24 V industrial buses and 48 V telecom rails.
When designing with this part, ensure VGS is driven to at least 10 V for full enhancement into the lowest RDS(on) region. A low-impedance gate-drive path with a series gate resistor of 10 to 100 ohm is recommended to control ringing and EMI. The SO-8 thermal pad should be soldered to a copper pour of at least 1 square inch to keep junction temperature within safe limits at full load.
This page synthesizes distributor pricing, drop-in alternatives in the same SO-8 footprint, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRF7495TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7495TRPBF (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7495PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7469TRPBF
✅ Drop-In✓ In Stock
$0.37 / Unit
View Datasheet →IRF7854TRPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →Si4486EY-T1-E3
✅ Drop-In📋 Reference alternative (not in catalog)
Si4486EY
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7495TRPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) Max | 100 V |
| Continuous Drain Current (ID) at TA=25 C | 7.3 A |
| On-Resistance RDS(on) Max at VGS=10V | 22 mOhm |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Total Gate Charge (Qg) Typ | 34 nC at 10 V |
| Input Capacitance (Ciss) Max | 1530 pF at 25 V |
| Power Dissipation (PD) Max at TA=25 C | 2.5 W |
| Operating Temperature Range | -55 C to +150 C (TJ) |
| Package | 8-SOIC (SO-8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Estimated EOL Date | 2027 |
| ECCN | EAR99 |
IRF7495TRPBF Pin Configuration
| Pin 1 | Source — Source terminal (connected to pins 2, 3) |
| Pin 2 | Source — Source terminal (connected to pins 1, 3) |
| Pin 3 | Source — Source terminal (connected to pins 1, 2) |
| Pin 4 | Gate — Gate control input |
| Pin 5 | Drain — Drain terminal (connected to pins 6, 7, 8) |
| Pin 6 | Drain — Drain terminal (connected to pins 5, 7, 8) |
| Pin 7 | Drain — Drain terminal (connected to pins 5, 6, 8) |
| Pin 8 | Drain — Drain terminal (connected to pins 5, 6, 7) |
Safe Operating Area (DC, TJ=25 C, Tcase)
Typical Applications
IRF7495TRPBF is suitable for 7 applications: Synchronous Rectifier in DC-DC Converters, High-Side Load Switch in Telecom Equipment, Battery Protection in 12V-36V Battery Packs, Motor Drive H-Bridge (Low-Power), LED Lighting Driver Power Stage, Industrial 24V Solenoid and Relay Driver, Solar Power MPPT / Solar Charge Controller.
Synchronous Rectifier in DC-DC Converters
The IRF7495TRPBF is well-suited as a synchronous-rectifier MOSFET in 48V-input to lower-voltage buck converters and forward converters. Its 22 mOhm RDS(on) at VGS=10V and only 34 nC typical total gate charge translate into low conduction and switching losses at frequencies up to 500 kHz. The SO-8 footprint allows compact layouts with minimal gate-loop inductance, while the 100V VDS rating provides >2x headroom over 48V telecom rails for reliable avalanche margin. Compared to a Schottky diode replacement, the IRF7495TRPBF reduces rectifier losses by 50-70% at full load, materially improving converter efficiency.
Recommended
High-Side Load Switch in Telecom Equipment
The IRF7495TRPBF works effectively as a high-side load switch in 24V to 48V telecom distribution systems where 7.3A continuous current handling is required. Its 100V VDS provides substantial margin above 48V rails, and the ±20V VGS rating tolerates transient gate-drive spikes typical of hot-swap events. The 22 mOhm on-resistance keeps full-load conduction drop below 0.2V at 7A, minimizing heat dissipation on the SO-8 footprint. Use this part in Power-over-Ethernet (PoE) powered-device switches, telecom line cards, and 24V industrial bus switches requiring inrush current limiting and load-disconnect capability.
Recommended
Battery Protection in 12V-36V Battery Packs
The IRF7495TRPBF functions as a low-side disconnect switch in 12V to 36V lithium-ion or lead-acid battery protection circuits. Its 7.3A continuous rating covers the discharge current of mid-power e-bike, e-scooter, and portable medical battery packs, while the 100V VDS withstands inductive flyback from motors and solenoids. The 34 nC Qg allows a simple low-cost gate driver to achieve sub-microsecond turn-off for short-circuit protection. For higher-current packs, parallel multiple IRF7495TRPBF devices on a shared thermal copper pour to scale to 15-20A continuous discharge capability.
Recommended
Motor Drive H-Bridge (Low-Power)
The IRF7495TRPBF is suitable for low-power brushed-DC motor drive H-bridges rated up to about 50W continuous output, such as those used in small pumps, fans, valve actuators, and robotic actuators. The 100V VDS provides significant margin above the 24V or 36V motor supply rails, allowing reliable operation during regenerative braking transients. Its SO-8 package simplifies PCB layout when four MOSFETs are placed in a compact bridge arrangement. For higher-power motor drives (above 100W), consider Infineon's TO-220 or TO-247 MOSFETs such as the IRFB3207ZPBF for better thermal handling.
Recommended
LED Lighting Driver Power Stage
In LED lighting drivers operating from 24V to 48V DC inputs, the IRF7495TRPBF functions as the main switching element in buck or buck-boost topologies driving high-brightness LED strings. The 100V VDS rating comfortably handles 48V input rails with substantial avalanche margin, and the 7.3A current rating supports LED strings up to about 100W. Its low 34 nC Qg allows switching frequencies above 200 kHz, enabling smaller magnetics and more compact driver enclosures. Use this part in commercial LED downlights, architectural lighting, and horticultural LED fixtures where efficiency above 92% is required.
Recommended
Industrial 24V Solenoid and Relay Driver
The IRF7495TRPBF is well-matched for driving 24V industrial solenoids, relays, and valves where fast turn-off and freewheeling-diode-less operation are desired. Its 100V VDS easily absorbs the inductive kickback of 24V solenoids, and the 22 mOhm RDS(on) keeps the FET fully enhanced during continuous solenoid hold, reducing heat dissipation compared to bipolar driver alternatives. The 34 nC Qg enables microsecond-scale switching, allowing PWM current control of proportional solenoids. Use this part in PLC output modules, industrial process control, and HVAC valve actuators.
Recommended
Solar Power MPPT / Solar Charge Controller
In small-scale solar charge controllers and Maximum Power Point Tracking (MPPT) converters, the IRF7495TRPBF serves as the main switching element handling panel voltages up to about 80V (well within the 100V VDS limit). Its low RDS(on) of 22 mOhm minimizes conduction loss, which is critical for maximizing harvested solar energy. The 34 nC Qg allows high-frequency operation to shrink the input/output filter size. This part suits 100W to 300W portable solar generators and off-grid lighting systems where the SO-8 footprint enables compact designs.
Recommended
Recommended Products Summary
Engineering reference data for IRF7495TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7495PBF | IRF7469TRPBF | IRF7854TRPBF | Si4486EY-T1-E3 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology |
| Package | 8-SOIC (SO-8) | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lower gate charge than Vishay Si4486EY cross-reference (vs Si4486EY-T1-E3)
- Higher continuous current than IRF7469TRPBF (vs IRF7469TRPBF)
- Standard SO-8 footprint enables drop-in replacement across multiple families (vs Vishay Si4486EY-T1-E3)
Design Notes
Estimated: at TA=25 C, the SO-8 package dissipates a maximum of 2.5 W with the standard 1 square inch copper pour (theta_JA approx 50 C/W). For continuous 7.3 A operation, calculate conduction loss as P = I^2 x RDS(on) x (1 + k x (TJ-25)), where k approx 0.005/C for the temperature coefficient. Ensure junction temperature stays below 150 C by either reducing continuous current, increasing copper pour area, or paralleling multiple devices. Always measure actual case temperature in your specific PCB layout before finalizing thermal design.
Minimize the gate-drive loop area by placing the gate driver IC within 5 mm of pin 4 and using a wide, short gate trace (target <50 nH loop inductance). For high-frequency switching above 200 kHz, add a 10 ohm gate resistor close to the driver output to dampen ringing, and place a 100 ohm pull-down resistor between gate and source to prevent inadvertent turn-on during VDS dv/dt transients. Source pins 1-2-3 should be tied to a low-impedance ground plane for both thermal and electrical performance.
Do not operate the IRF7495TRPBF at VGS below 8 V for switching applications; the RDS(on) specification is defined at VGS=10 V and rises sharply at lower gate drive. For logic-level MCU-driven applications (3.3 V or 5 V GPIO), use a gate-driver IC or a charge-pump circuit. Also note the ±20 V VGS maximum rating - transient gate-source overvoltage from Miller coupling can damage the oxide if the gate driver is not clamped. Always include a 10 kohm gate-source pull-down resistor on the final design.
The SO-8 package has a thermal pad on the underside (exposed pad connected to the drain tab) that must be soldered to a copper pour of at least 1 square inch to achieve the rated 2.5 W power dissipation. Use multiple thermal vias (typically 9-16 vias of 0.3 mm diameter) under the thermal pad to conduct heat into inner copper layers. For higher-power applications, dedicate both top and bottom copper layers to thermal spreading and stitch them with the via array.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial/commercial applications, not automotive. Estimated EOL date 2027 per Verified Web Data.
