IRF8736PBF vs BSO150N03MDGXUMA1 Comparison
Detailed side-by-side comparison of IRF8736PBF by Infineon and BSO150N03MDGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 β ActiveSpecification Comparison
| Parameter | IRF8736PBF | BSO150N03MDGXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $0.37 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at TA=70Β°C | [DATA_NEEDED: ID at TA=70Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΞ© (typical) | β |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) | β |
| Total Gate Charge Qg | 17 nC (typical) | β |
| Maximum Power Dissipation at TA=25Β°C | 2.5 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C (junction) | -55C to +150C |
| Package | SO-8 (8-SO) | PG-DSO-8 (SO-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (Unlimited) | 1 (unlimited) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant | β |
| Qualification Standard | JEDEC | β |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSO150N03MDGXUMA1 |
| Product Type | β | Dual N-Channel MOSFET Array |
| Technology | β | OptiMOS 3M (30V trench MOSFET) |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) max per channel | β | 9.3 A |
| On-State Resistance (RDS(on)) max | β | 15 mOhm at VGS=10V |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.0 V |
| Power Dissipation (PD) max | β | 1.4 W |
| RoHS Status | β | Compliant |
| Channel Configuration | β | Dual N-Channel (independent) |