IRF8736PBF vs IRF8736TRPBF Comparison

Detailed side-by-side comparison of IRF8736PBF by Infineon and IRF8736TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8736PBF IRF8736TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.27
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TA=70Β°C [DATA_NEEDED: ID at TA=70Β°C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) at VGS=10V 4.8 mΞ© β€”
On-Resistance RDS(on) at VGS=4.5V 6.0 mΞ© (typical) β€”
Gate-Source Threshold Voltage VGS(th) Logic-level (optimized for 5 V drive) β€”
Total Gate Charge Qg 17 nC (typical) β€”
Maximum Power Dissipation at TA=25Β°C 2.5 W β€”
Operating Temperature Range -55Β°C to +150Β°C (junction) -55C to +150C (junction)
Package SO-8 (8-SO) SO-8 (8-SO, MS-012AA)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (Unlimited) 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Lead-Free, RoHS3 Compliant β€”
Qualification Standard JEDEC β€”
Avalanche Rated Yes (fully characterized avalanche voltage and current) Yes (fully characterized avalanche voltage)
FET Type β€” N-Channel
Technology β€” StrongIRFET / HEXFET
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 18 A
Power Dissipation (PD) Max at TA=25C β€” 2.5 W
Drain-Source On-Resistance (RDS(on)) Max β€” 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical β€” 17 nC
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free, RoHS compliant)
Configuration β€” Single
Packaging β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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