IRF8736TRPBF vs BSC054N04NSGATMA1 Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and BSC054N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC054N04NSGATMA1

BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 βœ“ Active

Specification Comparison

Parameter IRF8736TRPBF BSC054N04NSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.42
FET Type N-Channel β€”
Technology StrongIRFET / HEXFET OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TA=25C 18 A β€”
Power Dissipation (PD) Max at TA=25C 2.5 W β€”
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V β€”
Gate Charge (Qg) Typical 17 nC β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package SO-8 (8-SO, MS-012AA) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55C to +150C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) β€”
Configuration Single β€”
Packaging Tape & Reel (TRPBF suffix) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” BSC054N04NSGATMA1
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Tc=25C β€” 81 A
Continuous Drain Current (ID) at Ta=25C β€” 17 A
On-Resistance RDS(on) max at VGS=10V β€” 5.4 mOhm
Gate-Source Voltage (VGS) max β€” Β±20 V
Power Dissipation at Tc=25C β€” 57 W
Power Dissipation at Ta=25C β€” 2.5 W
RoHS Status β€” Compliant
Gate Drive Voltage (recommended) β€” 10 V
Lead-Free Reflow β€” Yes

Datasheets & Resources

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