IRF8736TRPBF vs IRF7832TRPBF Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and IRF7832TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8736TRPBF IRF7832TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.92
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET HEXFET (trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TA=25C 18 A 20 A
Power Dissipation (PD) Max at TA=25C 2.5 W β€”
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V β€”
Gate Charge (Qg) Typical 17 nC β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package SO-8 (8-SO, MS-012AA) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C (TJ)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) β€”
Configuration Single β€”
Packaging Tape & Reel (TRPBF suffix) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF7832TRPBF
Drain-Source Voltage (VDS) β€” 30 V
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 4.0 mOhm
Gate-Source Voltage (VGS) max β€” +/- 20 V
Gate Threshold Voltage (VGS(th)) typical β€” 1.0 V to 2.5 V
Total Gate Charge (Qg) typical β€” 34 nC
Power Dissipation (PD) at TA=25C β€” 2.5 W
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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