IRF8736TRPBF vs IRF8736PBF Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and IRF8736PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8736TRPBF IRF8736PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.45
FET Type N-Channel β€”
Technology StrongIRFET / HEXFET β€”
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TA=25C 18 A β€”
Power Dissipation (PD) Max at TA=25C 2.5 W β€”
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V β€”
Gate Charge (Qg) Typical 17 nC β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package SO-8 (8-SO, MS-012AA) SO-8 (8-SO)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55Β°C to +150Β°C (junction)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (Unlimited)
Avalanche Rated Yes (fully characterized avalanche voltage) Yes (fully characterized avalanche voltage and current)
Configuration Single β€”
Packaging Tape & Reel (TRPBF suffix) β€”
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at TA=25Β°C β€” 18 A
Continuous Drain Current (ID) at TA=70Β°C β€” [DATA_NEEDED: ID at TA=70Β°C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) at VGS=10V β€” 4.8 mΞ©
On-Resistance RDS(on) at VGS=4.5V β€” 6.0 mΞ© (typical)
Gate-Source Threshold Voltage VGS(th) β€” Logic-level (optimized for 5 V drive)
Total Gate Charge Qg β€” 17 nC (typical)
Maximum Power Dissipation at TA=25Β°C β€” 2.5 W
RoHS / Lead-Free β€” Lead-Free, RoHS3 Compliant
Qualification Standard β€” JEDEC

Datasheets & Resources

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