IRF8736TRPBF vs IRFR5305TRPBF Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF βœ“ Active

Specification Comparison

Parameter IRF8736TRPBF IRFR5305TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.32
FET Type N-Channel β€”
Technology StrongIRFET / HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) Max 30 V -55 V
Continuous Drain Current (ID) at TA=25C 18 A β€”
Power Dissipation (PD) Max at TA=25C 2.5 W β€”
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V β€”
Gate Charge (Qg) Typical 17 nC β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] -2 V to -4 V
Package SO-8 (8-SO, MS-012AA) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +175 C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (per JEDEC J-STD-020) 1
Avalanche Rated Yes (fully characterized avalanche voltage) β€”
Configuration Single β€”
Packaging Tape & Reel (TRPBF suffix) β€”
Polarity β€” P-Channel
Continuous Drain Current (ID) at TC=25C β€” 31 A
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V β€” 65 mOhm
Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C β€” 110 W
Single-Pulse Avalanche Energy (EAS) β€” 270 mJ
RoHS Status β€” Compliant (Pb-free PBF suffix)
Lead-Free Finish β€” Yes (PBF suffix)

Datasheets & Resources

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