IRF9952TRPBF vs IRF7907TRPBF Comparison

Detailed side-by-side comparison of IRF9952TRPBF by Infineon and IRF7907TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF9952TRPBF IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF βœ“ Active

Specification Comparison

Parameter IRF9952TRPBF IRF7907TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.43
Polarity / Configuration Complementary N-Channel + P-Channel, dual MOSFET array β€”
N-Channel VDS (Drain-Source Voltage) 30 V β€”
P-Channel VDS (Drain-Source Voltage) -30 V β€”
N-Channel Continuous Drain Current (ID) 3.5 A β€”
P-Channel Continuous Drain Current (ID) 2.3 A β€”
N-Channel R_DS(on) max 0.10 ohm (at VGS = 10 V) β€”
P-Channel R_DS(on) max 0.25 ohm (at VGS = -10 V) β€”
Total Package Power Dissipation (PD) 2 W β€”
Technology IR MOSFET / Fifth Generation HEXFET IR MOSFET (Infineon hexfet-style trench)
Package 8-pin SOIC (SO-8), surface mount 8-SOIC (SO-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C
RoHS Status Compliant (Pb-free, indicated by PBF suffix) Compliant
Tape and Reel Packaging Yes (TRPBF suffix) β€”
Qualification Consumer market β€”
Configuration β€” Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) Max β€” 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max β€” 11 A
On-Resistance (RDS(on)) Max β€” 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) β€” 1.35 V (typ)
Total Power Dissipation (PD) Max β€” 2 W
Lead-Free Status β€” Yes (PBF suffix)
Packaging β€” Tape & Reel (TR)
Channel Polarity β€” N-Channel (both)

Datasheets & Resources

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