IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon
MPN: IRF9952TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.94 | $0.94 |
| 10 | $0.79 | $7.90 |
| 100 | $0.58 | $58.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
| 2,500 | $0.32 | $800.00 |
IRF9952TRPBF Overview
A dual-MOSFET array like the IRF9952 integrates two discrete transistors into one IC package, providing a compact synchronous-switch or half-bridge building block for power management designs. In the system hierarchy, this part falls under discrete semiconductors (MOSFETs) and specifically into the dual/complementary MOSFET category that bridges single-MOSFET discretes and full half-bridge driver ICs. The complementary N+P configuration lets one array drive both high-side and low-side positions of a small buck, load-switch, or motor-reverse circuit without the BOM overhead of two separate SOT-23 or SO-8 FETs.
Key features include: 30 V absolute maximum VDS (N-channel) and -30 V VDS (P-channel), 3.5 A continuous I_D (N-channel) and 2.3 A continuous I_D (P-channel), 2 W total package power dissipation, and SO-8 surface-mount footprint. The complementary polarity means the P-channel is well suited to high-side load-switch roles where a P-FET eliminates the need for a charge pump, while the N-channel can serve as the low-side synchronous rectifier. Per the Infineon datasheet, total power dissipation is shared across both die inside the same SO-8 thermal envelope, with thermal resistance around 62.5 C/W.
Architecturally, the IRF9952 leverages Fifth Generation HEXFET technology, which optimized cell density and gate-charge figures to minimize both conduction and switching losses versus earlier generations. The two die share pin 4 and pin 5 as the common source/drain return path, while pins 1-3 are dedicated to the N-channel (G1, D1, S1) and pins 6-8 to the P-channel (G2, D2, S2). This pinout makes it a drop-in upgrade for legacy IRF7507/IRF7509 family designs.
Typical applications include small DC-DC synchronous buck converters, USB load switches, battery protection circuits in portable electronics, small motor H-bridge driver stages, and complementary level shifters in industrial control. The 30 V rating and 3.5 A capability also make it suitable for 12 V automotive accessory rails.
When designing with this part, derate total package power dissipation so both die stay within the 2 W SO-8 budget. Gate-drive voltage thresholds differ between the N-channel (logic-level friendly) and the P-channel (which needs careful gate-source headroom). Pair the array with a gate driver that can source/sink enough current for the combined gate charge (typical Qg figures are 10-20 nC per channel).
This page synthesizes distributor pricing, verified drop-in alternatives including IRF7309 and IRF7319, and practical design notes not found in a single manufacturer datasheet.
Drop-in alternatives for IRF9952TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF9952TRPBF (same form factor and footprint) β differing in Package, Technology, Operating Temperature Range, Configuration, Manufacturer.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7309
β Drop-Inπ Reference alternative (not in catalog)
IRF7319
β Drop-Inπ Reference alternative (not in catalog)
IRF7509
β Drop-Inπ Reference alternative (not in catalog)
IRF7313TRPBF
β Drop-Inβ In Stock
$0.27 / Unit
View Datasheet βVBA5325
β Drop-Inπ Reference alternative (not in catalog)
IRF9952TRPBF Maximum Ratings & Electrical Characteristics
| Polarity / Configuration | Complementary N-Channel + P-Channel, dual MOSFET array |
| N-Channel VDS (Drain-Source Voltage) | 30 V |
| P-Channel VDS (Drain-Source Voltage) | -30 V |
| N-Channel Continuous Drain Current (ID) | 3.5 A |
| P-Channel Continuous Drain Current (ID) | 2.3 A |
| N-Channel R_DS(on) max | 0.10 ohm (at VGS = 10 V) |
| P-Channel R_DS(on) max | 0.25 ohm (at VGS = -10 V) |
| Total Package Power Dissipation (PD) | 2 W |
| Technology | IR MOSFET / Fifth Generation HEXFET |
| Package | 8-pin SOIC (SO-8), surface mount |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) |
| RoHS Status | Compliant (Pb-free, indicated by PBF suffix) |
| Tape and Reel Packaging | Yes (TRPBF suffix) |
| Qualification | Consumer market |
IRF9952TRPBF Pin Configuration
| Pin 1 | S1 β N-channel source |
| Pin 2 | G1 β N-channel gate |
| Pin 3 | D2 β P-channel drain |
| Pin 4 | D1 β N-channel drain |
| Pin 5 | S2 β P-channel source |
| Pin 6 | D2 β P-channel drain |
| Pin 7 | G2 β P-channel gate |
| Pin 8 | S2 β P-channel source |
Safe Operating Area (N-channel, DC, TA=25C)
Typical Applications
IRF9952TRPBF is suitable for 6 applications: USB Load Switch and Power Distribution, Small DC-DC Synchronous Buck Converter, Battery Protection and Portable Electronics, Motor Driver H-Bridge Half-Bridge, Automotive 12V Accessory Rail Switching, Complementary Level Shifter and Signal Switch.
USB Load Switch and Power Distribution
The IRF9952TRPBF is ideal for USB Type-A load-switch and small power-distribution switch roles on 5 V rails. The integrated P-channel (30 V, 2.3 A) handles the high-side switch without a charge pump, while the N-channel (30 V, 3.5 A) can serve as a return-side synchronous element or be paralleled for redundancy. With 0.10 ohm N-channel R_DS(on) at 10 V VGS, conduction loss at 0.5 A is only 25 mW, well below the 2 W SO-8 envelope. The complementary N+P pair eliminates the need for two discrete SOT-23 FETs, saving PCB area in hubs and charging ports.
Recommended
Small DC-DC Synchronous Buck Converter
The IRF9952TRPBF suits low-current synchronous buck designs from 24 V down to 5 V/3.3 V rails. The P-channel operates as the high-side switch, while the N-channel acts as the low-side synchronous rectifier, and both share the same SO-8 footprint and 2 W dissipation budget. With N-channel R_DS(on) of 0.10 ohm and Qg figures in the 10-20 nC range, switching losses at 500 kHz are manageable. Pair with a small gate driver or PWM controller such as the TPS54331 family for sub-1 A point-of-load designs.
Recommended
Battery Protection and Portable Electronics
The IRF9952TRPBF is widely used in single-cell Li-ion battery protection and small portable power paths. The P-channel handles the high-side disconnect role, blocking reverse current when the battery is depleted, while the N-channel can carry return current or act as a secondary protection FET. With 30 V VDS and 2.3 A P-channel rating, the part comfortably handles 4.2 V Li-ion up to USB-monitored 2 A charge currents. The SO-8 package is footprint-compatible with most 1-cell protection PCBs.
Recommended
Motor Driver H-Bridge Half-Bridge
The IRF9952TRPBF can build a small brushed DC motor H-bridge when paired with a complementary second array. The N-channel handles low-side switching and the P-channel handles high-side switching on each half-bridge leg, eliminating the need for charge-pump high-side gate drive. With 3.5 A N-channel and 2.3 A P-channel capability, the bridge drives small motors up to roughly 1 A continuous, suitable for fans, pumps, toys, and consumer robotics. The complementary pair reduces gate-driver complexity versus all-N designs.
Recommended
Automotive 12V Accessory Rail Switching
The IRF9952TRPBF operates on 12 V automotive rails with substantial margin (30 V VDS vs 12 V nominal, 35 V load-dump safe). It switches interior lighting, accessory sockets, and small actuator loads from 12 V battery. The P-channel high-side switch has no quiescent current path when off, which suits always-on battery applications. Although the part is Consumer-qualified rather than AEC-Q100, the SO-8 dual N+P architecture is widely used in non-safety automotive subsystems.
Recommended
Complementary Level Shifter and Signal Switch
The IRF9952TRPBF can implement a small complementary analog switch or level shifter for signals between 0 V and 30 V. The P-channel passes high-side signals, the N-channel passes low-side signals, and the SO-8 dual fits into tiny analog-front-end circuits. Typical use cases include USB-C CC/SBU signal muxing, audio line switching, and small-signal routing in test equipment. The 0.10/0.25 ohm on-resistance is acceptable for sub-100 mA analog signals.
Recommended
Recommended Products Summary
Engineering reference data for IRF9952TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7309 | IRF7319 | IRF7509 | IRF7313TRPBF | VBA5325 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | SO-8 (SOIC-8) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SOP-8 - same |
| Polarity | N+P Complementary | N+P Complementary | N+P Complementary | N+P Complementary | N+P Complementary | N+P Complementary |
| VDS Rating (N-channel) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous ID (N-channel) | 3.5 A | 5.0 A (higher) | 5.0 A (higher) | 2.5 A (lower) | 3.5 A | 5.0 A (higher) |
| R_DS(on) max N-channel | 0.10 ohm | 0.050 ohm (lower) | 0.050 ohm (lower) | 0.135 ohm (higher) | 0.10 ohm | 0.045 ohm (lower) |
| Package Power Dissipation | 2.0 W | 2.0 W | 2.0 W | 2.0 W | 2.0 W | 2.0 W |
| Recommended Upgrade | Reference (legacy) | Yes (Infineon upgrade) | Yes (Infineon upgrade) | Yes (smaller profile) | Same-family variant | Cross-brand upgrade |
Key Differentiators
- Infineon Fifth Generation HEXFET process with proven SO-8 dual supply chain (vs Generic dual MOSFET arrays)
- Complementary N+P in one package eliminates need for two discretes (vs Two separate SOT-23 MOSFETs)
- IRF7309/IRF7319 are documented upgrade paths in Infineon datasheet (vs IRF9952 (this part))
Design Notes
Estimated: The IRF9952TRPBF SO-8 thermal resistance is approximately 62.5 C/W (junction to ambient on JEDEC EIA/JESD51 test board). With combined 2 W dissipation, junction temperature rises 125C above ambient, so continuous load must be derated. Practical continuous current per channel in still air on a 1 sq inch copper pour is roughly 1.5 A N-channel and 1.0 A P-channel before reaching 100C junction. Add thermal vias or copper pours if the design runs near full rated current.
Place the IRF9952TRPBF on a contiguous ground/return copper pour tied to pins 1, 5, and 8 (the three source pins). Keep the high-current drain traces (pins 4, 3, 6) wide and short to minimize parasitic inductance that can spike VDS above the 30 V rating. A small gate-series resistor (10-47 ohm) damps ringing on the N-channel gate. Mirror the layout for pins 4 and 5 versus pins 3 and 6 to balance the two die thermally.
Do not drive the P-channel gate above ground or below its absolute maximum VGS of +/-20 V. Per the Infineon datasheet, gate-oxide breakdown typically occurs at 20 V on either channel, so a 12 V gate-drive level is the practical maximum. Also note that R_DS(on) is specified at VGS = 10 V; logic-level drive at 5 V will roughly double or triple R_DS(on). Finally, do not parallel the two channels in the same package - they share die and will not current-share.
Estimated: Conduction loss in the N-channel at 1 A continuous and 0.10 ohm R_DS(on) is 100 mW; the P-channel at 1 A and 0.25 ohm is 250 mW. Total steady-state loss of 350 mW is well within the 2 W envelope. Switching losses depend on Qg (typically 10-20 nC per channel) and switching frequency; at 500 kHz with 10 nC Qg, switching loss is roughly 50 mW per channel. Total power budget supports operation up to about 5 A peak in pulse mode.
Compliance Information
TRPBF suffix confirms RoHS-compliant Pb-free matte-tin plating per Infineon datasheet. Qualified for Consumer market per IR/Infineon datasheet; not AEC-Q100 qualified - for AEC-Q100 automotive designs use IPG20N10S436AATMA1 or similar. REACH, halogen-free, and conflict-mineral declarations should be requested from Infineon for full compliance documentation.
