IRF9Z34NPBF vs IRF7205TRPBF Comparison

Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9Z34NPBF IRF7205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.18
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) at Tc=25C -19 A β€”
Pulsed Drain Current (Idm) -72 A β€”
Power Dissipation (Pd) at Tc=25C 68 W β€”
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] β€”
Gate Charge (Qg) 23.3 nC (per Mouser listing) β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Operating Temperature Range -55C to +175C (junction) β€”
Package TO-220AB (through-hole, 3-pin) SO-8 (8-SO)
Mounting Type Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source β€”
Technology HEXFET (5th generation) IR HEXFET (4th generation)
Lead-Free / Halogen-Free Yes (PBF suffix) β€”
RoHS Status Compliant β€”
FET Type β€” P-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) at TA=25Β°C β€” -4.6 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V β€” 70 mΞ©
On-Resistance RDS(on) max @ VGS=-4.5V β€” 130 mΞ©
Gate Threshold Voltage VGS(th) β€” -1.0 V to -3.0 V
Total Gate Charge Qg β€” 27 nC
Power Dissipation (TC=25Β°C) β€” 2.5 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
RoHS / Lead-Free β€” Lead-Free (PBF suffix), RoHS compliant
Packaging β€” Tape & Reel (TR suffix)

Datasheets & Resources

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