IRFB3207ZPBF vs IRFB7437PBF Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRFB7437PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB3207ZPBF | IRFB7437PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.92 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | StrongIRFET™, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | 250 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Operating Junction Temperature | -55 C to +175 C | -55°C to +175°C |
| Package | TO-220AB (3-lead through-hole) | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL Level | N/A (through-hole) | Not Applicable (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 195 A |
| R_DS(on) typ @ VGS=10V | — | 1.5 mΩ |
| R_DS(on) max @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 3.0 V (1.7 V min, 3.9 V max per datasheet family) |
| Total Gate Charge (Qg) | — | 150 nC |
| Miller Plateau Charge (Qgd) | — | 49 nC |
| Power Dissipation (PD @ Tc=25°C) | — | 230 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 0.62 °C/W |
| Lead Finish | — | Lead-free (PBF - Pb-free plating) |
| RoHS Status | — | Compliant |
| AEC-Q101 Automotive | — | Not qualified (industrial/consumer) |