IRFB7437PBF - 40V 195A 2.0mΩ StrongIRFET N-MOSFET | Infineon
MPN: IRFB7437PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.65 | $16.50 |
| 100 | $1.32 | $132.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
IRFB7437PBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. The IRFB7437PBF belongs to the N-channel enhancement-mode MOSFET family, a subtype of power transistors (hypernyms: MOSFET → field-effect transistor → transistor → discrete semiconductor). Its low R_DS(on) minimizes conduction loss, while the TO-220 through-hole package allows straightforward PCB mounting and direct attachment to an external heatsink for high-current applications.
Key features include a -55°C to +175°C operating junction temperature range, an avalanche-rated body diode, and a logic-level VGS(th) that supports standard 10 V gate drive. The TO-220AB package provides a thermal resistance of approximately 0.62°C/W (junction-to-case), enabling the 230 W power rating. The part is also lead-free (PBF suffix indicates Pb-free plating) and fully RoHS compliant.
The IRFB7437PBF uses Infineon's StrongIRFET trench cell technology, which optimizes the cell pitch and gate geometry for the lowest possible R_DS(on) × Qg figure of merit in the 40 V class. This makes the device competitive with discrete GaN FETs in cost-sensitive high-current applications while retaining the ruggedness and avalanche capability of silicon. According to the Infineon datasheet, the die supports a single-pulse avalanche energy rating and is fully characterized for linear-mode operation.
Typical applications include brushed DC motor drives, BLDC motor drives, battery protection circuits, half-bridge and full-bridge topologies, synchronous rectification in DC/DC converters, resonant mode power supplies, OR-ing and redundant power switches, and DC/AC inverters. The 40 V rating suits 12 V and 24 V automotive/industrial buses, while the 195 A current rating supports high-power tools, e-bike controllers, and battery management systems.
When designing with this device, ensure that VGS is driven to 10 V for full enhancement and that the gate driver can source/sink the 49 nC Miller charge within the required rise/fall time. The body diode has a slow reverse recovery; pair with an anti-parallel FET or Schottky if hard switching. A low-impedance Kelvin source connection (using TO-220 tab as source) is critical at high di/dt.
This page synthesizes distributor pricing, drop-in TO-220AB alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRFB7437PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFB7437PBF (same form factor and footprint) — differing in Drain-Source Voltage (VDS), MSL Level, Manufacturer, Operating Junction Temperature, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFB3004PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB7434PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRLB3034PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB7430PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IRFB7437PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon (formerly International Rectifier) |
| Technology | StrongIRFET™, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 195 A |
| Silicon-Limited Drain Current | 250 A |
| R_DS(on) typ @ VGS=10V | 1.5 mΩ |
| R_DS(on) max @ VGS=10V | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th) typ) | 3.0 V (1.7 V min, 3.9 V max per datasheet family) |
| Total Gate Charge (Qg) | 150 nC |
| Miller Plateau Charge (Qgd) | 49 nC |
| Power Dissipation (PD @ Tc=25°C) | 230 W |
| Operating Junction Temperature | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | 0.62 °C/W |
| Package | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole |
| Lead Finish | Lead-free (PBF - Pb-free plating) |
| RoHS Status | Compliant |
| MSL Level | Not Applicable (through-hole package) |
| AEC-Q101 Automotive | Not qualified (industrial/consumer) |
IRFB7437PBF Pin Configuration
| Pin 1 | Gate — Gate drive input (VGS up to ±20V; logic-level enhancement) |
| Pin 2 | Drain — Drain connection (also connected to metal mounting tab) |
| Pin 3 | Source — Source connection (return for gate drive and load) |
Safe Operating Area - DC
Typical Applications
IRFB7437PBF is suitable for 6 applications: Brushed DC Motor Drive, BLDC Motor Drive (3-Phase Inverter), Synchronous Rectification in DC/DC Converters, Battery Protection & OR-ing Switches, Half-Bridge and Full-Bridge Power Topologies, Resonant Mode Power Supplies (LLC, ZVS).
Brushed DC Motor Drive
The IRFB7437PBF's 195 A continuous drain current and 2.0 mΩ R_DS(on) at VGS=10 V make it ideal for high-current brushed DC motor drives in industrial automation, e-bike controllers, and power tools. At 24 V bus and 100 A peak motor current, the device dissipates only ~20 W at 100% duty cycle, fitting a small TO-220 clip-on heatsink. The 40 V VDS rating provides 15 V headroom above a 24 V bus, comfortably absorbing inductive flyback transients. The 150 nC Qg enables PWM switching up to 25 kHz, well above the audible range, allowing silent operation. Pair with an IR2109SPBF half-bridge gate driver for full H-bridge control, and add a flyback Schottky across the motor for inductive clamping.
Recommended
BLDC Motor Drive (3-Phase Inverter)
In a 3-phase BLDC motor inverter, six IRFB7437PBF MOSFETs (three high-side + three low-side) form a full bridge that drives motors from a 24-36 V battery. The 250 A silicon-limited current supports 5-10 kW peak motor power for e-mobility, robotics, and drone propulsion. The 49 nC Miller plateau charge allows up to 50 kHz PWM, minimizing torque ripple and acoustic noise. The strong body diode simplifies commutation, though external Schottky clamps (e.g., MBR3045) reduce switching loss. A heatsink with 0.5°C/W to ambient keeps junction temperature below 100°C at 50 A continuous phase current, supporting the 175°C junction rating per Infineon datasheet.
Recommended
Synchronous Rectification in DC/DC Converters
The IRFB7437PBF is a strong choice for the synchronous rectifier (low-side) position in 12 V to 3.3 V/5 V buck converters delivering 50-100 A output current. The 1.5 mΩ typical R_DS(on) reduces rectification loss to under 5 W at 100 A, improving efficiency by 2-3% versus Schottky diode rectification. The 150 nC Qg and 49 nC Qgd are well-matched to integrated buck controllers (e.g., IRF3007 family) operating at 300-500 kHz. The 40 V VDS comfortably handles 12 V inputs with transients, and the body diode supports dead-time conduction without reverse-recovery issues that would disrupt the regulation loop.
Recommended
Battery Protection & OR-ing Switches
In 24-36 V lithium battery packs, the IRFB7437PBF serves as a low-R_DS(on) protection switch or OR-ing MOSFET that disconnects the pack during fault conditions. The 2.0 mΩ on-resistance keeps voltage drop below 20 mV at 10 A, and the 195 A current rating supports 5 kW peak discharge for power tools and e-bikes. The 40 V VDS withstands 36 V nominal battery voltage plus transient spikes from motor back-EMF. The strongIRFET avalanche rating provides robustness when the load is abruptly disconnected, absorbing inductive kickback energy without a TVS clamp. Pair with a battery management IC (e.g., TLE9012) for cell balancing and protection.
Recommended
Half-Bridge and Full-Bridge Power Topologies
The IRFB7437PBF excels in half-bridge and full-bridge topologies driving transformers, motors, or heaters from a 24-48 V bus. Two devices in half-bridge configuration form a complete switching node with 195 A peak current and 2.0 mΩ total path resistance (high+low side), minimizing conduction loss in 5-10 kW inverter designs. The 49 nC Qgd limits switching loss to ~5 mJ per transition at 50 A, supporting 100 kHz operation. The 40 V VDS supports 36 V industrial bus with transient headroom. An IR2110SPBF high/low-side gate driver generates the bootstrap high-side drive, while the 175°C junction rating tolerates the thermal stress of hard-switched bridge operation with proper heatsink design.
Recommended
Resonant Mode Power Supplies (LLC, ZVS)
In zero-voltage-switching (ZVS) LLC resonant converters, the IRFB7437PBF's body diode supports the freewheeling path during resonant commutation, eliminating the need for an external anti-parallel diode. The 1.5 mΩ typical R_DS(on) at 100 A gives conduction loss below 15 W, while ZVS operation reduces switching loss to near zero at 100-300 kHz switching frequency. The 40 V VDS handles the 36 V resonant tank voltage with margin, and the 150 nC Qg allows the resonant tank to fully charge the device capacitances within the dead-time window. A heatsink sized for 30 W continuous loss supports a 2-3 kW LLC converter design for telecom and server 48 V applications.
Recommended
Recommended Products Summary
Engineering reference data for IRFB7437PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB3004PBF | IRFB7434PBF | IRLB3034PBF | IRFB7430PBF | IRFB3207ZPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 75 V |
| Continuous Drain Current (ID @ Tc=25°C) | 195 A | 195 A | 121 A | 195 A | 195 A | 75 A |
| R_DS(on) max @ VGS=10V | 2.0 mΩ | 1.8 mΩ | 2.0 mΩ | 1.8 mΩ | 3.3 mΩ | 4.0 mΩ |
| Technology | StrongIRFET (trench) | StrongIRFET (trench) | StrongIRFET (trench) | Logic-level StrongIRFET | StrongIRFET (trench) | HEXFET |
| AEC-Q101 Automotive Qualified | No (industrial) | No | No | No | No | No |
Key Differentiators
- Lowest R_DS(on) in 40V TO-220AB StrongIRFET family (vs IRFB7430PBF)
- Higher continuous current than IRFB7434PBF at identical R_DS(on) (vs IRFB7434PBF)
- Standard 10V VGS drive vs logic-level requirement on IRLB3034PBF (vs IRLB3034PBF)
Design Notes
Estimated: At 195 A continuous drain current with R_DS(on) = 2.0 mΩ typical, the static conduction loss is approximately 76 W, requiring a heatsink with thermal resistance below 0.5°C/W to keep the junction below 100°C at 25°C ambient (junction-to-case = 0.62°C/W, case-to-heatsink = 0.2°C/W with thermal compound). A TO-220 clip-on heatsink of approximately 50-80 cm² is the minimum for full-load operation. Mount the device on the heatsink with thermal compound (e.g., Wakefield 120-2) and a silicone insulator if the heatsink is electrically conductive (the drain tab is at drain potential).
The TO-220AB package has the drain connected to the metal tab, which creates a high source inductance (~7-10 nH) that can cause VGS ringing at high di/dt. Use a Kelvin source connection by routing the gate drive return directly to the source pin (pin 3) rather than the tab. Keep the gate drive loop area below 0.5 cm² to minimize parasitic inductance, and add a 10 Ω gate resistor to dampen ringing. Place a 100 nF ceramic bypass capacitor directly between VCC of the gate driver and the source pin of the MOSFET, with traces shorter than 5 mm.
Do not exceed the maximum VDS of 40 V; the device is not avalanche-tolerant at voltages above 40 V. Do not drive the gate above ±20 V; VGS above 20 V can punch through the gate oxide and permanently damage the part. The body diode has a slow reverse recovery time of approximately 80-100 ns; pair with a Schottky diode (e.g., MBR2045) in anti-parallel for hard-switching applications above 50 kHz. Always include a TVS clamp (e.g., 33 V or 36 V) across the drain-source to absorb inductive flyback from motor or transformer loads.
For through-hole TO-220AB assembly, drill 1.0 mm or 0.8 mm holes for the three leads, with 2.54 mm (100 mil) pitch matching the standard TO-220 footprint. Use a copper pour area of at least 25 cm² on the source side for heat spreading, and ensure the drain tab has a clearance of at least 3 mm to any adjacent traces. For high-current applications (>50 A), use 2 oz copper on both layers to minimize voltage drop and resistance. The tab hole should be 4 mm diameter to accommodate the TO-220 mounting screw and thermal pad.
Compliance Information
PBF suffix indicates lead-free (Pb-free) plating. RoHS compliant per Infineon product page. Not AEC-Q101 qualified - for automotive applications requiring AEC-Q101, use the AUIRFB7437 variant in D2PAK package. Halogen-free and REACH compliant per Infineon material declaration.
