IRFB4020PBF vs IRF3205STRLPBF Comparison
Detailed side-by-side comparison of IRFB4020PBF by Infineon and IRF3205STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4020PBF | IRF3205STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.02 |
| FET Type | N-Channel | β |
| Technology | IR MOSFET (HEXFET) | HEXFET (advanced process) |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC | 18 A | β |
| Power Dissipation (PD) at TC | 100 W | β |
| RDS(on) Maximum | 100 mOhm | β |
| Gate-Source Voltage (VGS) Maximum | 20 V | β |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | β |
| Operating Junction Temperature | 175 C (max) | β |
| Package | TO-220AB (through-hole) | TO-263-3 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Lead-Free (PbF suffix) | Yes | β |
| Market Qualification | Consumer | β |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | β |
| Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-Source Voltage (Vdss) | β | 55 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 110 A |
| Pulsed Drain Current (Idm) | β | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | β | 8 mΞ© max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | β | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | β | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 200 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (Tj) |
| Lead-Free / RoHS Status | β | Lead-Free / RoHS Compliant (PBF suffix) |
| Packaging | β | Tape & Reel (STRL) |