IRFH7440TRPBF vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IRFH7440TRPBF by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH7440TRPBF
IRFH7440TRPBF - 40V StrongIRFET N-MOSFET, 85A, 2.4mΞ© | Infineon
IRFH7440TRPBF β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IRFH7440TRPBF | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 85 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance (RDS(on) max at VGS=10V) | 2.4 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Total Gate Charge (Qg) | 92 nC | β |
| Power Dissipation (PD, Tc=25Β°C) | 104 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | β |
| Technology | StrongIRFETβ’ (HEXFET) | OptiMOS 3 (trench MOSFET) |
| Package | 8-PQFN (5x6 mm) with exposed thermal pad | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Optimization | 10V (Normal Level), switching < 100 kHz | β |
| Qualification | JEDEC standard | β |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant (PBF suffix) | β |
| MSL (Moisture Sensitivity Level) | MSL 1 | β |
| Typical Applications | Brushed motor drive, DC-DC converters, solenoid/load switching | β |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Operating Temperature Range | β | -55C to +150C |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |