IRFH7440TRPBF - 40V StrongIRFET N-MOSFET, 85A, 2.4mΩ | Infineon
MPN: IRFH7440TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.78 | $780.00 |
IRFH7440TRPBF Overview
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a fast electronic switch or amplifier in power-conversion circuits. It belongs to the broader discrete-semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. Power MOSFETs sit below IGBTs in voltage rating but offer far faster switching, making them the workhorse for DC-DC converters, motor drives, and load switches from sub-1V to roughly 600V rails.
Key specifications include 40V drain-source breakdown, 2.4mΩ typical RDS(on) at VGS=10V, 92nC total gate charge, and 104W continuous power dissipation at case temperature 25°C. The StrongIRFET™ silicon platform trades slightly higher RDS(on) for substantially improved avalanche ruggedness and linear-mode safe operating area compared to standard trench MOSFETs, suiting it to harsh load-dump and inductive-switching environments.
The 8-PQFN (5x6mm) package exposes the die directly to a top-side thermal pad, achieving an ultra-low junction-to-case thermal resistance that enables sustained high current from a small footprint. Combined with the part's optimized gate-charge and Miller plateau, the IRFH7440TRPBF delivers high efficiency in hard-switched topologies from 12V/24V automotive and industrial buses.
Typical applications include brushed DC motor drives, solenoid switching, high-current DC-DC buck/half-bridge stages, battery protection, and power-ORing circuits. The 10V gate-drive optimization matches standard gate-driver ICs such as the IR2104 and bootstrap half-bridges common in motor-control designs.
When designing with this part, observe the safe operating area at high junction temperatures and provide sufficient copper pour on the PCB thermal pad. Avoid exceeding the linear-mode dissipation boundary; use a proper gate-driver to minimize turn-on/turn-off losses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRFH7440TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFH7440TRPBF (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFH7084TRPBF
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →IRFH7085TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH7440TRPBF-1
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7854TRPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC019N04LSTATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.21 / Unit
View Datasheet →BSC050N04LSGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.41 / Unit
View Datasheet →IRFH7440TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 85 A |
| On-Resistance (RDS(on) max at VGS=10V) | 2.4 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | 92 nC |
| Power Dissipation (PD, Tc=25°C) | 104 W |
| Operating Junction Temperature | -55°C to +150°C |
| Technology | StrongIRFET™ (HEXFET) |
| Package | 8-PQFN (5x6 mm) with exposed thermal pad |
| Mounting Type | Surface Mount |
| Gate Drive Optimization | 10V (Normal Level), switching < 100 kHz |
| Qualification | JEDEC standard |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant (PBF suffix) |
| MSL (Moisture Sensitivity Level) | MSL 1 |
| Typical Applications | Brushed motor drive, DC-DC converters, solenoid/load switching |
IRFH7440TRPBF Pin Configuration
| Pin 1 | Source — Source terminal (connected to thermal pad internally) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate terminal — drive with 10V nominal VGS |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Drain — Drain terminal — exposed thermal pad on bottom side of package |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IRFH7440TRPBF is suitable for 7 applications: Brushed DC Motor Drive (H-Bridge), Solenoid and Valve Switching, High-Current DC-DC Buck Converter, Battery Protection and Power ORing, Half-Bridge and Full-Bridge Inverter Stage, Hot-Swap and Inrush Current Limiting, LED Lighting Driver Output Stage.
Brushed DC Motor Drive (H-Bridge)
The IRFH7440TRPBF is explicitly targeted by Infineon for brushed DC motor drive applications. Its 40V VDS comfortably covers 12V and 24V automotive/industrial buses with headroom for inductive flyback transients. The 85A continuous current rating handles stalled-rotor and high-torque startup conditions typical of power-window, seat, wiper, and pump motors. The 2.4 mΩ RDS(on) minimizes conduction losses and thermal stress during PWM speed control, while the StrongIRFET™ silicon's enhanced avalanche energy rating absorbs the unclamped inductive switching (UIS) energy from motor winding inductance. Pair two IRFH7440TRPBF in a half-bridge with a gate driver such as the IR2104STRPBF (XAIPART Site MPN list) to form a complete low-side/high-side H-bridge stage. The exposed thermal pad of the 8-PQFN (5x6) package mounts directly to PCB copper, providing the heat-spreading needed for sustained 50-85A operation.
Recommended
Solenoid and Valve Switching
The IRFH7440TRPBF's avalanche ruggedness makes it well-suited for driving solenoids, relays, and hydraulic/pneumatic valves where the inductor's stored energy must be safely dissipated when the MOSFET turns off. At 24V industrial bus voltages with typical solenoid inductances of 10-100mH, peak flyback voltages can reach 60-100V; the 40V VDS rating requires a flyback/snubber clamp, but the StrongIRFET™'s high UIS rating handles the residual avalanche energy without device failure. The 85A current rating covers large solenoid inrush currents, and the 92nC total gate charge keeps driver losses low in PWM proportional-control loops. Mount the PQFN thermal pad to at least 1 square inch of copper to sustain the steady-state current in continuous-duty industrial solenoid applications.
Recommended
High-Current DC-DC Buck Converter
In a synchronous buck converter for 12V-to-low-voltage rails, the low-side MOSFET carries the full load current during freewheeling. The IRFH7440TRPBF's 2.4 mΩ RDS(on) minimizes conduction loss, improving overall converter efficiency at high output currents (30-60A per phase). The 92nC gate charge and low Qgd support switching frequencies of 100-300 kHz in a multi-phase VRM topology, enabling small inductor selection. Use the high-side slot for a 40V-rated companion such as BSC019N04LSTATMA1 in a complementary synchronous pair. The 8-PQFN (5x6) exposed thermal pad allows direct PCB heatsinking, critical for compact VRM designs in networking and server point-of-load applications.
Recommended
Battery Protection and Power ORing
The IRFH7440TRPBF serves as a low-loss reverse-battery and over-current protection MOSFET in 12V/24V battery management systems. With 2.4 mΩ on-resistance and 85A continuous current capability, it dissipates minimal heat in steady-state operation while protecting downstream electronics from reversed battery polarity and fault currents. In redundant power ORing topologies for telecom and server equipment, the low RDS(on) reduces forward-conduction losses versus traditional Schottky diode solutions. The PQFN (5x6) footprint enables compact PCB layouts in battery packs and hot-swap controllers. The StrongIRFET™ technology provides the avalanche ruggedness required for hot-plug events and load-dump transients common in automotive battery systems.
Recommended
Half-Bridge and Full-Bridge Inverter Stage
In half-bridge and full-bridge inverter legs for industrial drives, UPS systems, and welding equipment, the IRFH7440TRPBF pairs four MOSFETs to deliver bidirectional power flow at 40V bus voltage. The 85A per-device rating supports 170A+ peak phase current in a full-bridge, while the optimized 10V gate drive matches standard half-bridge driver ICs. The exposed thermal pad distributes heat across PCB copper, allowing the four-device full-bridge to fit on a compact daughter-card. The StrongIRFET™ linear-mode SOA helps during dead-time cross-conduction transients when both devices partially conduct. Use a gate driver with built-in dead-time generation such as the IR2104STRPBF to prevent shoot-through.
Recommended
Hot-Swap and Inrush Current Limiting
The IRFH7440TRPBF is well-suited for hot-swap controllers in 12V/24V distributed-power systems where it acts as the series-pass element controlling inrush current into large bulk capacitors. Operating in the linear region during turn-on, the MOSFET dissipates the inrush energy while the HotSwap controller monitors VDS or current. The StrongIRFET™'s enhanced linear-mode SOA is critical here, allowing the device to sustain high power dissipation for tens of milliseconds during capacitor charging without failure. The 85A rating covers 12V server-bus hot-swap applications (typically 30-60A continuous), while the 2.4 mΩ RDS(on) minimizes steady-state voltage drop once fully enhanced. Pair with a dedicated HotSwap controller IC for programmable current limiting and fault response.
Recommended
LED Lighting Driver Output Stage
In high-brightness LED lighting drivers for automotive headlights, architectural lighting, and stage fixtures, the IRFH7440TRPBF can switch constant-current regulator outputs at high frequency for PWM dimming. The 85A continuous rating supports multi-amp LED strings, while the 2.4 mΩ RDS(on) keeps conduction losses low in the linear or hysteretic current-regulator topology. The 40V VDS rating accommodates the boost-converter output voltages typically needed to drive 12-15 white LEDs in series. Fast switching at 10V gate drive enables PWM dimming frequencies above 1kHz without audible flicker. The PQFN (5x6) footprint with exposed thermal pad simplifies thermal design in the compact metal-housing constraints of LED fixtures.
Recommended
Recommended Products Summary
Engineering reference data for IRFH7440TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFH7084TRPBF | IRFH7085TRPBF | IRF7854TRPBF | BSC019N04LSTATMA1 | BSC050N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Package | 8-PQFN (5x6) | 8-PQFN (5x6) - same | 8-PQFN (5x6) - same | 8-PQFN (5x6) - same | 8-PQFN (5x6) SuperSO8 - same | 8-PQFN (5x6) SuperSO8 - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Technology Family | StrongIRFET™ | StrongIRFET™ | StrongIRFET™ | StrongIRFET™/HEXFET | OptiMOS™ | OptiMOS™ |
Key Differentiators
- StrongIRFET™ technology optimized for <100 kHz switching with enhanced avalanche ruggedness (vs BSC019N04LSTATMA1 (OptiMOS))
- 85A continuous drain current at Tc=25°C in compact 5x6mm footprint (vs IRFH7084TRPBF)
- Pin-compatible with other Infineon 8-PQFN (5x6) StrongIRFET family members (vs IRFH7085TRPBF (same package))
Design Notes
Estimated: At continuous 85A with RDS(on)=2.4 mΩ, conduction loss is P = I² × RDS(on) ≈ 85² × 0.0024 = ~17.3W. The exposed thermal pad of the 8-PQFN (5x6) must be soldered to a PCB copper pour of at least 1 square inch (645 mm²) on each connected inner layer to keep junction temperature rise below 50°C. Without sufficient copper, the junction will exceed 150°C at full load. Use multiple thermal vias (0.3mm drill, 1.0mm pitch) under the pad to the opposite-side copper plane for best heat extraction.
Place the gate-drive loop as small as possible: the gate resistor, gate-driver output, and MOSFET gate pin should form a tight loop of < 5 mm total path length. This minimizes the parasitic inductance that causes ringing, gate-oscillation, and possible shoot-through in half-bridge configurations. Use a 10Ω gate resistor in series with the gate for damped switching; bypass the gate-driver VCC with a 100nF ceramic capacitor placed within 5 mm of the driver IC.
Do not exceed VGS of ±20V (absolute maximum). Use a gate-source resistor (10-100kΩ) to hold the MOSFET off during power-up when the gate-driver supply is not yet established — without this, a floating gate can partially enhance the MOSFET, causing shoot-through in half-bridge configurations or high quiescent current. For high dv/dt applications, add a small RC snubber (10Ω + 1nF) across drain-source if ringing exceeds 80% of VDS rating.
When used in a half-bridge or full-bridge at switching frequencies above 50kHz, the drain-source voltage transitions can couple capacitively to the gate through the MOSFET's Miller capacitance (Cgd). Select a gate-driver IC with sufficient gate-drive current (>1A sink/source) and proper Miller clamp or asymmetric drive strength to prevent dv/dt-induced false turn-on. Reference Infineon application note AN-936 for high-frequency gate-drive design.
The 8-PQFN (5x6) land pattern requires careful thermal-via design. Use an array of thermal vias on 1.0mm pitch under the central exposed pad to provide both electrical connection to the drain and thermal dissipation. Fill or cap the vias to prevent solder wicking during reflow that could leave voids under the thermal pad. Recommend a stencil aperture of 60-80% area ratio for the central thermal pad to ensure proper solder paste deposition and reliable solder joint formation.
Compliance Information
RoHS compliant per Infineon PBF suffix marking. JEDEC-qualified per datasheet. Not AEC-Q100 qualified — verify automotive requirements with Infineon for related automotive-grade parts. MSL 1 per PartGenie data.
