IRFH8318TRPBF vs IRFR3806TRPBF Comparison

Detailed side-by-side comparison of IRFH8318TRPBF by Infineon and IRFR3806TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΞ© | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΞ© | Infineon

IRFH8318TRPBF βœ“ Active

Specification Comparison

Parameter IRFH8318TRPBF IRFR3806TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.52
Manufacturer Infineon Technologies β€”
Part Number IRFH8318TRPBF β€”
Technology StrongIRFETβ„’ (N-Channel Trench MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Ta=25Β°C 27 A β€”
Continuous Drain Current (ID) at Tc=25Β°C 120 A β€”
On-Resistance RDS(on) max at VGS=10V 3.1 mΞ© β€”
Total Gate Charge (Qg) 41 nC 22 nC
Power Dissipation (Ta) 3.6 W β€”
Power Dissipation (Tc) 59 W β€”
Package PQFN 5x6 (SuperSO8, 8-PowerTDFN) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55Β°C to +150Β°C β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level 1 β€”
Description Synchronous MOSFET for high-frequency buck converters β€”
Transistor Polarity β€” N-Channel
MOSFET Operating Mode β€” Enhancement
Continuous Drain Current (ID) at Tc β€” 43 A
On-State Resistance RDS(on) max β€” 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C β€” 71 W
Package / Case β€” TO-252AA (DPAK)
Operating Temperature Range β€” -55 C to +175 C
Gate-Source Voltage (VGS) max β€” +/- 20 V
Number of Units in IC β€” 1
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Avalanche Rated β€” Yes (HEXFET family)

Datasheets & Resources

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