IRFL024ZTRPBF vs IRLL2705TRPBF Comparison

Detailed side-by-side comparison of IRFL024ZTRPBF by Infineon and IRLL2705TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFL024ZTRPBF IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF βœ“ Active
Infineon
IRLL2705TRPBF IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRLL2705TRPBF βœ“ Active

Specification Comparison

Parameter IRFL024ZTRPBF IRLL2705TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.26 $0.22
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET fifth generation)
Drain-Source Voltage (Vds) 55 V β€”
Continuous Drain Current (Id) at Ta=25C 5.1 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Rds(on) Max at Vgs=10V 57.5 mOhm β€”
Gate Charge (Qg) Typ 9.1 nC β€”
Gate-Source Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] β€”
Power Dissipation (Pd) at Ta=25C 1 W β€”
Operating Temperature Range -55C to +150C -55 deg C to +175 deg C
Package SOT-223 SOT-223
Mounting Type Surface Mount Surface Mount
Pin Count 3 (+ drain tab) β€”
MSL Level 1 β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at 25 deg C β€” 3.8 A
Peak Drain Current (IDM, pulsed) β€” 5.2 A
RDS(on) max at VGS=10V β€” 40 mOhm
Total Gate Charge (Qg) β€” 32 nC
Gate Drive Level β€” Logic-Level
Power Dissipation at TA=25 deg C β€” 1 W (Ta), 2.1 W (per LCSC listing)
Dynamic dv/dt Rating β€” Yes

Datasheets & Resources

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