IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon
MPN: IRFL024ZTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.65 | $6.50 |
| 100 | $0.48 | $48.00 |
| 500 | $0.39 | $195.00 |
| 1,000 | $0.31 | $310.00 |
| 2,500 | $0.26 | $650.00 |
IRFL024ZTRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to drive loads, regulate current, or perform synchronous rectification in power electronics. The IRFL024ZTRPBF sits in the N-channel enhancement-mode category, which is the most common topology for low-side switching, DC-DC conversion, and motor control because N-channel carriers offer lower on-resistance per unit silicon area than P-channel equivalents. Within the broader taxonomy, this part belongs to: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET.
Key features include a continuous drain current of 5.1 A at 25 C case temperature, a pulsed drain current rating higher than the continuous rating for transient load handling, and a 1 W power dissipation figure in the SOT-223 package. The HEXFET process reduces cell pitch and optimizes gate charge, achieving a 9.1 nC total gate charge that minimizes driver losses at high switching frequencies. The SOT-223 surface-mount package exposes the drain tab for direct PCB heatsinking, enabling usable current well above the bare SOT-23-class parts.
Architecturally, the device uses a planar HEXFET cell structure with a vertical DMOS current path. The 57.5 mOhm Rds(on) at 10 V Vgs translates into roughly 290 mW of conduction loss at 2.3 A continuous drain current, allowing efficient low-side switch operation without elaborate thermal management at moderate loads. The SOT-223 thermal pad attaches directly to PCB copper, providing a low thermal resistance path for heat removal.
Typical applications include low-side switching in DC-DC converters, relay and solenoid drivers, motor speed control, load switching in automotive body modules, battery protection circuits, and LED driver stages. The 55 V drain-source rating provides ample margin for 12 V and 24 V bus systems where inductive transients can approach several tens of volts.
When designing with this part, ensure the gate is driven to at least 10 V for full enhancement and use a gate resistor to control ringing. The exposed drain tab must be soldered to a copper pour sized to limit the junction-to-ambient thermal rise. Verify SOA at the target DC and pulsed operating points.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical PCB design guidance that complements the Infineon datasheet with engineering context for sourcing and design decisions.
Drop-in alternatives for IRFL024ZTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFL024ZTRPBF (same form factor and footprint) β differing in Technology, FET Type, Package, RoHS Status, Lead-Free.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFL024ZPBF
β Drop-Inπ Reference alternative (not in catalog)
IRLL2705TRPBF
β Drop-Inβ In Stock
$0.22 / Unit
View Datasheet βNTR4101PT1G
β Drop-Inπ Reference alternative (not in catalog)
VBJ1638
β Drop-Inπ Reference alternative (not in catalog)
NTR4503NT1G
β Drop-Inπ Reference alternative (not in catalog)
IRFL024ZTRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A |
| Rds(on) Max at Vgs=10V | 57.5 mOhm |
| Gate Charge (Qg) Typ | 9.1 nC |
| Power Dissipation (Pd) at Ta=25C | 1 W |
| Operating Temperature Range | -55C to +150C |
| Package | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 (+ drain tab) |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IRFL024ZTRPBF Pin Configuration
| Pin 1 | Gate β MOSFET gate control input (drive to 10V for full enhancement) |
| Pin 2 | Drain β MOSFET drain (internally connected to rear tab) |
| Pin 3 | Source β MOSFET source (typically connected to ground for low-side switch) |
| Pin 4 | Drain (Tab) β Drain terminal on rear tab; provides thermal path to PCB copper |
Safe Operating Area (DC)
Typical Applications
IRFL024ZTRPBF is suitable for 6 applications: Low-Side Switching in DC-DC Converters, Automotive Relay and Solenoid Drivers, Battery Protection and Load Switching, LED Driver and Lighting Control, Industrial Motor Speed Control, Hot-Swap and Inrush Current Limiting.
Low-Side Switching in DC-DC Converters
The IRFL024ZTRPBF serves as a low-side switch in buck converters for 12 V/24 V distributed power systems, where its 55 V Vds rating and 57.5 mOhm Rds(on) minimize conduction loss. At 3 A continuous load, the device dissipates roughly 0.5 W, manageable with a 200 mm^2 copper pour on the drain tab. Compared to smaller SOT-23 MOSFETs, the SOT-223 package provides significantly better thermal performance for sustained current. The 9.1 nC Qg keeps driver losses low at switching frequencies up to 250 kHz, making it well-matched to point-of-load regulators and synchronous rectifier secondary-side switches. Use a 10 ohm gate resistor to control ringing and a Schottky freewheeling diode across inductive loads for clean switching.
Recommended
Automotive Relay and Solenoid Drivers
The IRFL024ZTRPBF is widely used as a low-side driver for automotive relays, solenoids, and small motors where 12 V bus transients can reach 40 V under load-dump conditions. The 55 V Vds rating provides comfortable margin above worst-case transients, and the 5.1 A continuous drain current handles typical relay coil currents of 0.5-2 A. The SOT-223 drain tab solders directly to chassis-grounded copper for heat removal, supporting continuous operation at moderate duty cycles. Compared to DPAK alternatives, the smaller SOT-223 footprint enables more compact body control module designs. A flyback diode across inductive loads is mandatory; the IRFL024ZTRPBF's avalanche rating must be verified against the inductive kick energy.
Recommended
Battery Protection and Load Switching
In battery management systems for portable and backup-power applications, the IRFL024ZTRPBF functions as a reverse-polarity and over-current protection switch. Its 55 V rating covers 4S-12S lithium battery packs, and its low Rds(on) of 57.5 mOhm minimizes voltage drop during high-current discharge, preserving battery runtime. The SOT-223 package supports the thermal load from continuous 2-3 A discharge currents, with the drain tab providing a low-thermal-resistance path to PCB copper. Compared to P-channel alternatives, this N-channel part requires a gate-driver supply above Vbatt, but it offers lower Rds(on) per unit cost.
Recommended
LED Driver and Lighting Control
The IRFL024ZTRPBF drives high-brightness LED strings in architectural, automotive, and industrial lighting where PWM dimming requires a fast-switching low-side element. Its 9.1 nC gate charge supports PWM frequencies above 20 kHz without audible noise, while the 55 V Vds rating accommodates 24 V LED strings. At 1 A LED current, the device dissipates only 57 mW, eliminating the need for a heatsink. The SOT-223 footprint is well-suited to compact driver PCBs. Compared to dedicated LED driver ICs, this discrete MOSFET offers lower cost in multi-channel designs and allows the system MCU to control dimming and color mixing directly.
Recommended
Industrial Motor Speed Control
The IRFL024ZTRPBF operates as a low-side chopper in small DC motor speed controllers for industrial automation, where PWM switching at 1-25 kHz regulates motor torque and speed. The 57.5 mOhm Rds(on) at Vgs=10V keeps conduction losses below 1 W at 3 A continuous motor current, and the SOT-223 thermal pad handles sustained PWM duty cycles at moderate power. The 55 V Vds rating supports 24 V and 36 V industrial bus systems. Compared to IGBT alternatives, the MOSFET's faster switching speed reduces switching losses and EMI. A flyback diode across the motor terminals is required to suppress back-EMF.
Recommended
Hot-Swap and Inrush Current Limiting
In 12 V/24 V hot-swap controller circuits, the IRFL024ZTRPBF acts as the main pass element that limits inrush current when a PCB is inserted into a live backplane. Its 55 V Vds rating covers 24 V telecom and industrial systems, while the 5.1 A continuous drain current supports standard load profiles. The SOT-223 package with drain tab provides adequate heat sinking for sustained operation at 2-3 A. Designers typically add a gate resistor and soft-start network to control the turn-on dV/dt, reducing connector arcing. Compared to dedicated hot-swap ICs with integrated charge pumps, this discrete approach offers lower cost and flexibility in fault-response tuning.
Recommended
Recommended Products Summary
Engineering reference data for IRFL024ZTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFL024ZPBF | IRLL2705TRPBF | NTR4101PT1G | VBJ1638 | NTR4503NT1G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | VB-Mall (Chinese brand) | onsemi |
| Package | SOT-223 | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same |
| Drain-Source Voltage (Vds) | 55 V | 55 V | 55 V | 55 V | 60 V | 30 V |
| Technology | HEXFET (IR MOSFET) | HEXFET | HEXFET | Trench MOSFET | Trench MOSFET | Trench MOSFET |
Key Differentiators
- 55V Vds rating with 57.5 mOhm Rds(on) in compact SOT-223 (vs NTR4101PT1G)
- HEXFET advanced process technology (vs VBJ1638)
- Same-brand Infineon family with automotive pedigree (vs IRFR024NTRPBF)
Design Notes
The SOT-223 drain tab is the primary thermal path. At 5.1 A continuous drain current and 57.5 mOhm Rds(on), the worst-case conduction loss is roughly 1.5 W, which exceeds the 1 W package rating at 25 C ambient. Solder the drain tab to a copper pour of at least 200 mm^2 on a 1 oz outer layer to keep junction temperature rise below 50 C. Without adequate copper, derate continuous current to approximately 2-3 A. For high-current applications, consider DPAK alternatives like IRFR024NTRPBF which offer lower thermal resistance at the cost of larger footprint.
Use a 10 ohm gate resistor to dampen parasitic ringing between the gate-source capacitance and the gate-driver trace inductance. Place the gate resistor as close to the IC gate pin as possible. Add a 100 kohm pull-down resistor from gate to source to ensure the MOSFET stays off when the driver is in high-impedance state (e.g., during MCU reset). The source pin should be connected directly to the ground plane with a short, wide trace to minimize source-inductance-induced gate voltage bounce.
Do not exceed the absolute maximum Vds of 55 V; inductive kickback from relay coils, solenoids, or motors can easily exceed 80 V without a flyback diode. Always include a flyback (freewheeling) diode rated for at least the load current, with adequate reverse-voltage margin. Verify the avalanche energy rating of the IRFL024ZTRPBF against your worst-case inductive kick - if exceeded, the device may fail short. Additionally, ensure the gate is driven to at least 10 V (not 3.3 V or 5 V logic levels) for full enhancement and lowest Rds(on).
Compliance Information
RoHS compliant per Infineon product page. Lead-free (Pb-free) reflow-compatible. Not explicitly AEC-Q100 qualified - check with Infineon for automotive-grade equivalents in the IRFR024N series.
